PartNumber | STP17N80K5 | STP170N8F7 | STP17N62K3 |
Description | MOSFET N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-220 package | MOSFET N-channel 80 V, 0.003 Ohm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package | MOSFET N-Ch 620V .34 Ohm 15A SuperMESH3 |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Tradename | MDmesh | STripFET | - |
Packaging | Tube | - | Tube |
Series | STP17N80K5 | STP170N8F7 | STP17N62K3 |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.063493 oz | 0.011640 oz | 0.011640 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 80 V | 620 V |
Id Continuous Drain Current | - | 120 A | 15 A |
Rds On Drain Source Resistance | - | 3.9 mOhms | 380 mOhms |
Vgs th Gate Source Threshold Voltage | - | 4.5 V | 4.5 V |
Vgs Gate Source Voltage | - | 20 V | 30 V |
Qg Gate Charge | - | 120 nC | 94 nC |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | + 150 C |
Pd Power Dissipation | - | 250 W | 190 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | - |
Height | - | 4.6 mm | - |
Length | - | 15.75 mm | - |
Product | - | Power MOSFET | - |
Type | - | STripFET F7 | SuperMESH3 Power MOSFET |
Width | - | 10.4 mm | - |
Fall Time | - | 37 ns | 63 ns |
Rise Time | - | 53 ns | 26 ns |
Typical Turn Off Delay Time | - | 79 ns | 91 ns |
Typical Turn On Delay Time | - | 38 ns | 25 ns |
Transistor Type | - | - | 1 N-Channel |
Forward Transconductance Min | - | - | 1.6 S |