PartNumber | STP28NM60ND | STP28NM50N |
Description | MOSFET N-channel 600 V 0 120 Ohm typ 24 A | MOSFET N-Ch 500V 0.135 21A MDmesh II |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 500 V |
Id Continuous Drain Current | 23 A | 21 A |
Rds On Drain Source Resistance | 150 mOhms | 158 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V |
Vgs Gate Source Voltage | 25 V | 25 V |
Qg Gate Charge | 62.5 nC | 50 nC |
Pd Power Dissipation | 190 W | 90 W |
Configuration | Single | Single |
Packaging | Tube | Tube |
Series | STP28NM60ND | STP28NM50N |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 27 ns | 52 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 21.5 ns | 19 ns |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 92 ns | 62 ns |
Typical Turn On Delay Time | 23.5 ns | 13.6 ns |
Unit Weight | 0.011640 oz | 0.011640 oz |
Maximum Operating Temperature | - | + 150 C |
Tradename | - | MDmesh |
Type | - | N-Channel MDmesh II Power MOSFET |
Forward Transconductance Min | - | 1.5 S |