PartNumber | STP30NM60ND | STP30NM60N |
Description | MOSFET N-channel 600V, 25A FDMesh II | MOSFET N-channel 600V, 25A Power II Mdmesh |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Id Continuous Drain Current | 25 A | 25 A |
Rds On Drain Source Resistance | 130 mOhms | 130 mOhms |
Vgs Gate Source Voltage | 25 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 190 W | 190 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Tube | Tube |
Series | STB30NM60ND | STB30NM60N |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 75 ns | 70 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 50 ns | 24 ns |
Factory Pack Quantity | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 110 ns | 125 ns |
Typical Turn On Delay Time | 20 ns | 20 ns |
Unit Weight | 1.340411 oz | 0.011640 oz |
Height | - | 9.15 mm |
Length | - | 10.4 mm |
Width | - | 4.6 mm |