| PartNumber | STP40N65M2 | STP40N60M2 | STP40N20 |
| Description | MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package | MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2 | MOSFET N-Ch 200 Volt 40 Amp |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 200 V |
| Id Continuous Drain Current | 32 A | 34 A | 40 A |
| Rds On Drain Source Resistance | 87 mOhms | 88 mOhms | 45 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 3 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | 20 V |
| Qg Gate Charge | 56.5 nC | 57 nC | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 250 W | 250 W | 160 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | MDmesh | - | - |
| Packaging | Tube | Tube | Tube |
| Series | STP40N65M2 | STP40N60M2 | STB40N20 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 12 ns | 11 ns | 24 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 13.5 ns | 44 ns |
| Factory Pack Quantity | 1000 | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 96.5 ns | 96 ns | 74 ns |
| Typical Turn On Delay Time | 15 ns | 20.5 ns | 20 ns |
| Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Height | - | - | 9.15 mm |
| Length | - | - | 10.4 mm |
| Width | - | - | 4.6 mm |