STP80NF1

STP80NF12 vs STP80NF10 vs STP80NF10FP

 
PartNumberSTP80NF12STP80NF10STP80NF10FP
DescriptionMOSFET N-Ch 120 Volt 80 AmpMOSFET N-Ch 100 Volt 80 AmpMOSFET N Ch 100V 0.012 Ohm 30A
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220FP-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage120 V100 V100 V
Id Continuous Drain Current80 A80 A80 A
Rds On Drain Source Resistance18 mOhms15 mOhms15 mOhms
Vgs Gate Source Voltage20 V10 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation300 W300 W300 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameSTripFETSTripFETSTripFET
Height9.15 mm9.15 mm9.3 mm
Length10.4 mm10.4 mm10.4 mm
SeriesSTP80NF12STP80NF10STP80NF10FP
Transistor Type1 N-Channel1 N-Channel Power MOSFET1 N-Channel
TypeMOSFETMOSFET-
Width4.6 mm4.6 mm4.6 mm
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Forward Transconductance Min80 S50 S-
Fall Time115 ns60 ns60 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time145 ns80 ns80 ns
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time134 ns116 ns116 ns
Typical Turn On Delay Time40 ns26 ns26 ns
Unit Weight0.050717 oz0.050717 oz0.011640 oz
Vgs th Gate Source Threshold Voltage-2 V-
Qg Gate Charge-135 nC-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STP80NF12 MOSFET N-Ch 120 Volt 80 Amp
STP80NF10 MOSFET N-Ch 100 Volt 80 Amp
STP80NF10FP MOSFET N Ch 100V 0.012 Ohm 30A
STP80NF10 MOSFET N-CH 100V 80A TO-220
STP80NF10FP MOSFET N-CH 100V 38A TO-220FP
STP80NF12 MOSFET N-CH 120V 80A TO-220
STP80NF12 P80NF12 New and Original
STP80NF10FP P80NF10FP New and Original
STP80NF102 New and Original
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