PartNumber | STQ3N45K3-AP | STQ3N45K3-AP-CUT TAPE | STQ3N45K3 |
Description | MOSFET N-Ch 450V 3.2 Ohm 1.8A SuperMESH3 | ||
Manufacturer | STMicroelectronics | - | STMicroelectronics |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-92-3 | - | - |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 450 V | - | - |
Id Continuous Drain Current | 1.8 A | - | - |
Rds On Drain Source Resistance | 3.2 Ohms | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 6 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 2.5 W | - | - |
Tradename | SuperMESH | - | - |
Packaging | Ammo Pack | - | Ammo Pack |
Series | STQ3N45K3-AP | - | N-channel MDmesh |
Brand | STMicroelectronics | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 2000 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.007760 oz | - | 0.007760 oz |
Package Case | - | - | TO-92-3 |
Pd Power Dissipation | - | - | 2.5 W |
Vgs Gate Source Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 1.8 A |
Vds Drain Source Breakdown Voltage | - | - | 450 V |
Rds On Drain Source Resistance | - | - | 3.2 Ohms |
Qg Gate Charge | - | - | 6 nC |