STU13N

STU13N65M2 vs STU13NM60N vs STU13N60M2

 
PartNumberSTU13N65M2STU13NM60NSTU13N60M2
DescriptionMOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in IPAK packageMOSFET N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK packageMOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-251-3TO-251-3TO-251-3
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V-650 V
Id Continuous Drain Current10 A-11 A
Rds On Drain Source Resistance370 mOhms-380 mOhms
Vgs th Gate Source Threshold Voltage2 V-3 V
Vgs Gate Source Voltage25 V-25 V
Qg Gate Charge17 nC-17 nC
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation110 W-110 W
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameMDmeshMDmeshMDmesh
PackagingTube-Tube
SeriesSTU13N65M2STU13NM60NSTU13N60M2
Transistor Type1 N-Channel-1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time12 ns-9.5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time7.8 ns-10 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time38 ns-41 ns
Typical Turn On Delay Time11 ns-11 ns
Unit Weight0.139332 oz0.011993 oz0.139332 oz
Minimum Operating Temperature--- 55 C
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STU13N65M2 MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in IPAK package
STU13NM60N MOSFET N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package
STU13N60M2 MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
STU13N65M2 MOSFET N-CH 650V 10A IPAK
STU13N60M2 MOSFET N-CH 600V 11A IPAK
STU13NM60N MOSFET N-CH 600V 11A IPAK
STU13NB60 New and Original
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