| PartNumber | STU13N65M2 | STU13NM60N | STU13N60M2 |
| Description | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in IPAK package | MOSFET N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | - | 650 V |
| Id Continuous Drain Current | 10 A | - | 11 A |
| Rds On Drain Source Resistance | 370 mOhms | - | 380 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | - | 3 V |
| Vgs Gate Source Voltage | 25 V | - | 25 V |
| Qg Gate Charge | 17 nC | - | 17 nC |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 110 W | - | 110 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | MDmesh | MDmesh | MDmesh |
| Packaging | Tube | - | Tube |
| Series | STU13N65M2 | STU13NM60N | STU13N60M2 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 12 ns | - | 9.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 7.8 ns | - | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 38 ns | - | 41 ns |
| Typical Turn On Delay Time | 11 ns | - | 11 ns |
| Unit Weight | 0.139332 oz | 0.011993 oz | 0.139332 oz |
| Minimum Operating Temperature | - | - | - 55 C |