STU13N60M2

Mfr. #:: STU13N60M2
Manufacturer:: STMicroelectronics
Description:: MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
Lifecycle:: New from this manufacturer.
Datasheet:: STU13N60M2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: STU13N60M2 more Information STU13N60M2 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-251-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 11 A

Rds On - Drain-Source Resistance:: 380 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 25 V

Qg - Gate Charge:: 17 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 110 W

Configuration:: Single

Tradename:: MDmesh

Packaging:: Tube

Series:: STU13N60M2

Transistor Type:: 1 N-Channel

Brand:: STMicroelectronics

Fall Time:: 9.5 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 41 ns

Typical Turn-On Delay Time:: 11 ns

Unit Weight:: 0.139332 oz

Tags: STU13N, STU13, STU1, STU

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STU13N60M2 Description

***icroelectronics: N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package

***ure Electronics: N-Channel 600 V 0.39 Ohm Through Hole MDmesh M2 II Plus Mosfet - IPAK

***p One Stop: Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube

***(Formerly Allied Electronics): Power MOSFET Nch MDmesh II plus 600V 11A

***icroelectronics SCT: Power MOSFETs, 600V, 11A, IPAK, Tube

***icroelectronics: N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package

***ical: Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***icroelectronics SCT: Power MOSFETs, 600V, 11A, IPAK, Tube

***icroelectronics: N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK package

***r Electronics: Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube

***enic: 600V 12A 280m´Î@10V6A 110W 3V@250uA 1.2pF@100V N Channel 700pF@100v 19nC@10V +150¡Í@(Tj) TO-251(I-PAK) MOSFETs ROHS

***emi: N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK

*** Stop Electro: Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***icroelectronics: N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in IPAK package

***r Electronics: Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ment14 APAC: MOSFET, N CH, 600V, 8A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:70W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C

***el Electronic: VISHAY SIHU7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V

***ical: Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK

***S: French Electronic Distributor since 1988

***nell: MOSFET, N-CH, 600V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

***ure Electronics: IRFU430A Series N-Channel 500 V 2 Ohm 110 W Power Mosfet - IPAK (TO-251)

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 500V,RDS(ON) 1.7 Ohms,ID 5A,I-Pak,PD 110W,VGS+/-30V,-55C

*** Stop Electro: Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):1.7ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 500V, 5A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:1.1°C/W; On State resistance @ Vgs = 10V:1.7kohm; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:20A; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:27ns; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Market price

Part #	Mfg.	Description	Stock	Price
STU13N60M2 DISTI # 497-13885-5-ND	STMicroelectronics	MOSFET N-CH 600V 11A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	3000In Stock	5025:$1.0442 2550:$1.0844 525:$1.4057 150:$1.7109 75:$2.0081 10:$2.1290 1:$2.3700
STU13N60M2 DISTI # STU13N60M2	STMicroelectronics	Trans MOSFET N-CH 600V 11A 3-Pin IPAK Tube (Alt: STU13N60M2) RoHS: Compliant Min Qty: 75 Container: Tube	Europe - 3174	750:€0.6499 450:€0.6999 300:€0.7589 150:€0.8279 75:€1.0119
STU13N60M2 DISTI # STU13N60M2	STMicroelectronics	Trans MOSFET N-CH 600V 11A 3-Pin IPAK Tube - Rail/Tube (Alt: STU13N60M2) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	30000:$0.9769 18000:$0.9969 12000:$1.0429 6000:$1.0919 3000:$1.1459
STU13N60M2 DISTI # 06X3750	STMicroelectronics	PTD HIGH VOLTAGE	0	5000:$0.9950 2500:$1.0300 1000:$1.2700 500:$1.4200 100:$1.5300 10:$1.9100 1:$2.2500
STU13N60M2 DISTI # 511-STU13N60M2	STMicroelectronics	MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 RoHS: Compliant	0	3000:$1.0400
STU13N60M2 DISTI # STU13N60M2	STMicroelectronics	Transistor: N-MOSFET,unipolar,600V,7A,110W,IPAK	55	50:$1.4400 10:$1.6000 3:$2.0000 1:$2.3200
STU13N60M2 DISTI # TMOSP11424	STMicroelectronics	N-CH 600V 11A 380mOhmTO251-3 RoHS: Compliant	Stock DE - 2850Stock HK - 0Stock US - 0	75:$0.9933 150:$0.9365 300:$0.8798 450:$0.7946 750:$0.7662
STU13N60M2	STMicroelectronics	600V,0.35,11A,N-Channel Power MOSFET	116	1:$1.0900 100:$0.9700 500:$0.9200 1000:$0.8300
STU13N60M2 DISTI # XSKDRABS0031159	STMicroelectronics	Parallel I/O Port, 4 I/O, CMOS, PDSO8 RoHS: Compliant	2550 in Stock0 on Order	2550:$0.9240 750:$0.9900

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On Order:: 2500
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STU13N60M2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes