STU16N

STU16N60M2 vs STU16N65M2 vs STU16N65M5

 
PartNumberSTU16N60M2STU16N65M2STU16N65M5
DescriptionMOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK packageMOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK packageMOSFET N-CH 65V 12A MDMESH
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-251-3TO-251-3TO-251-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
ConfigurationSingleSingleSingle
TradenameMDmesh--
SeriesSTU16N60M2STU16N65M2STI16N65M5
Transistor Type1 N-Channel-1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity3000300075
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.011993 oz0.139332 oz0.139332 oz
Vds Drain Source Breakdown Voltage-650 V650 V
Id Continuous Drain Current-11 A12 A
Rds On Drain Source Resistance-360 mOhms299 mOhms
Vgs th Gate Source Threshold Voltage-2 V-
Vgs Gate Source Voltage-25 V25 V
Qg Gate Charge-19.5 nC-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-110 W90 W
Channel Mode-EnhancementEnhancement
Packaging-TubeTube
Fall Time-11.3 ns7 ns
Rise Time-8.2 ns9 ns
Typical Turn Off Delay Time-36 ns30 ns
Typical Turn On Delay Time-11.3 ns25 ns
Height--6.2 mm
Length--6.6 mm
Width--2.4 mm
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STU16N60M2 MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK package
STU16N65M2 MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
STU16N65M5 MOSFET N-CH 65V 12A MDMESH
STU16N60M2 MOSFET N-CH 600V 12A IPAK
STU16N65M2 MOSFET N-CH 650V 11A IPAK
STU16N65M5 MOSFET N-CH 650V 12A IPAK
STU16NB50 New and Original
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