PartNumber | STU16N60M2 | STU16N65M2 | STU16N65M5 |
Description | MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK package | MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package | MOSFET N-CH 65V 12A MDMESH |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-251-3 | TO-251-3 | TO-251-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Configuration | Single | Single | Single |
Tradename | MDmesh | - | - |
Series | STU16N60M2 | STU16N65M2 | STI16N65M5 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 75 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.011993 oz | 0.139332 oz | 0.139332 oz |
Vds Drain Source Breakdown Voltage | - | 650 V | 650 V |
Id Continuous Drain Current | - | 11 A | 12 A |
Rds On Drain Source Resistance | - | 360 mOhms | 299 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 25 V | 25 V |
Qg Gate Charge | - | 19.5 nC | - |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 110 W | 90 W |
Channel Mode | - | Enhancement | Enhancement |
Packaging | - | Tube | Tube |
Fall Time | - | 11.3 ns | 7 ns |
Rise Time | - | 8.2 ns | 9 ns |
Typical Turn Off Delay Time | - | 36 ns | 30 ns |
Typical Turn On Delay Time | - | 11.3 ns | 25 ns |
Height | - | - | 6.2 mm |
Length | - | - | 6.6 mm |
Width | - | - | 2.4 mm |