STU16N65M5

Mfr. #:: STU16N65M5
Manufacturer:: STMicroelectronics
Description:: MOSFET N-CH 65V 12A MDMESH
Lifecycle:: New from this manufacturer.
Datasheet:: STU16N65M5 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STU16N65M5 more Information STU16N65M5 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-251-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 12 A

Rds On - Drain-Source Resistance:: 299 mOhms

Vgs - Gate-Source Voltage:: 25 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 90 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Tube

Height:: 6.2 mm

Length:: 6.6 mm

Series:: STI16N65M5

Transistor Type:: 1 N-Channel

Width:: 2.4 mm

Brand:: STMicroelectronics

Fall Time:: 7 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 75

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 30 ns

Typical Turn-On Delay Time:: 25 ns

Unit Weight:: 0.139332 oz

Tags: STU16N6, STU16N, STU16, STU1, STU

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We provide 90-360 days warranty.

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STU16N65M5 Description

***icroelectronics: N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in IPAK

***r Electronics: Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N CH, 650V, 12A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***icroelectronics: N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in IPAK

***r Electronics: Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N CH, 650V, 7A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***icroelectronics: N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package

***ical: Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) IPAK Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***icroelectronics SCT: Power MOSFETs, 600V, 11A, IPAK, Tube

***icroelectronics: N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package

***ure Electronics: N-Channel 600 V 0.39 Ohm Through Hole MDmesh M2 II Plus Mosfet - IPAK

***p One Stop: Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) IPAK Tube

***(Formerly Allied Electronics): Power MOSFET Nch MDmesh II plus 600V 11A

***icroelectronics SCT: Power MOSFETs, 600V, 11A, IPAK, Tube

***emi: N-Channel Power MOSFET, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK

*** Stop Electro: Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***ponent Sense: Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK

***ser: MOSFETs 600V N-Channel MOSFET

***nell: MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:7A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:21A; No. of Pins:3; Power Dissipation:83W; Power, Pd:83W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V

***th Star Micro: Transistor MOSFET N-CH 500V 2.4A 3-Pin (3+Tab) IPAK

***ure Electronics: Single N-Channel 500 V 3 Ohms Through Hole Power Mosfet - IPAK (TO-251)

***ment14 APAC: MOSFET, N, 500V, 2.4A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:2.4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:7.7A; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:8.6ns; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

Part #	Mfg.	Description	Stock	Price
STU16N65M5 DISTI # 497-11402-5-ND	STMicroelectronics	MOSFET N-CH 650V 12A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	5In Stock	1:$4.3500
STU16N65M5 DISTI # 511-STU16N65M5	STMicroelectronics	MOSFET N-CH 65V 12A MDMESH RoHS: Compliant	0

Related products

Image	Part #	Description
	Mfr.#: STU16N60M2 OMO.#: OMO-STU16N60M2	MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK package
	Mfr.#: STU16N65M2 OMO.#: OMO-STU16N65M2	MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
	Mfr.#: STU16N65M5 OMO.#: OMO-STU16N65M5	MOSFET N-CH 65V 12A MDMESH
	Mfr.#: STU16L01 OMO.#: OMO-STU16L01-1190	New and Original
	Mfr.#: STU16N60M2 OMO.#: OMO-STU16N60M2-STMICROELECTRONICS	MOSFET N-CH 600V 12A IPAK
	Mfr.#: STU16N65M2 OMO.#: OMO-STU16N65M2-STMICROELECTRONICS	MOSFET N-CH 650V 11A IPAK
	Mfr.#: STU16N65M5 OMO.#: OMO-STU16N65M5-STMICROELECTRONICS	MOSFET N-CH 650V 12A IPAK
	Mfr.#: STU16NB50 OMO.#: OMO-STU16NB50-1190	New and Original

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On Order:: 2500
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STU16N65M5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes