| PartNumber | STU6N65M2-S | STU6N65M2 | STU6N65K3 |
| Description | MOSFET | MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package | MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3 |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | IPAK-3 | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 2.5 A | 4 A | 5.4 A |
| Rds On Drain Source Resistance | 1.35 Ohms | 1.35 Ohms | 1.1 Ohms |
| Vgs th Gate Source Threshold Voltage | 2 V | 3 V | 3.75 V |
| Vgs Gate Source Voltage | 10 V | 25 V | 30 V |
| Qg Gate Charge | 9.8 nC | 9.8 nC | 33 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 60 W | 60 W | 110 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Series | STU6N65M2 | STU6N65M2 | STU6N65K3 |
| Transistor Type | 1 N Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 20 ns | 20 ns | 24 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 7 ns | 7 ns | 10 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 6.5 ns | 6.5 ns | 44 ns |
| Typical Turn On Delay Time | 19 ns | 19 ns | 14 ns |
| RoHS | - | Y | Y |
| Tradename | - | MDmesh | SuperMESH |
| Packaging | - | Tube | Tube |
| Product | - | Power MOSFET | - |
| Unit Weight | - | 0.139332 oz | 0.139332 oz |