STU6N65

STU6N65M2-S vs STU6N65M2 vs STU6N65K3

 
PartNumberSTU6N65M2-SSTU6N65M2STU6N65K3
DescriptionMOSFETMOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK packageMOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseIPAK-3TO-251-3TO-251-3
Number of Channels1 Channel-1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V650 V650 V
Id Continuous Drain Current2.5 A4 A5.4 A
Rds On Drain Source Resistance1.35 Ohms1.35 Ohms1.1 Ohms
Vgs th Gate Source Threshold Voltage2 V3 V3.75 V
Vgs Gate Source Voltage10 V25 V30 V
Qg Gate Charge9.8 nC9.8 nC33 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation60 W60 W110 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
SeriesSTU6N65M2STU6N65M2STU6N65K3
Transistor Type1 N Channel-1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time20 ns20 ns24 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time7 ns7 ns10 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time6.5 ns6.5 ns44 ns
Typical Turn On Delay Time19 ns19 ns14 ns
RoHS-YY
Tradename-MDmeshSuperMESH
Packaging-TubeTube
Product-Power MOSFET-
Unit Weight-0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STU6N65M2-S MOSFET
STU6N65M2 MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
STU6N65K3 MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3
STU6N65M2 Darlington Transistors MOSFET POWER MOSFET
STU6N65K3 RF Bipolar Transistors MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3
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