PartNumber | STW70N60DM6 | STW70N60DM2 | STW70N10F4 |
Description | MOSFET N-channel 600 V, 0.037Ohm typ., 62A MDmesh DM6 Power MOSFET in a TO-247 package | MOSFET N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package | MOSFET N-Ch 100 Volt 60 Amp |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 100 V |
Id Continuous Drain Current | 62 A | 66 A | 65 A |
Rds On Drain Source Resistance | 42 mOhms | 42 mOhms | 19.5 mOhms |
Qg Gate Charge | 106 nC | 121 nC | 85 nC |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | - | Tube |
Series | DM6 | STW70N60DM2 | STW70N10F4 |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs th Gate Source Threshold Voltage | - | 3 V | 4 V |
Vgs Gate Source Voltage | - | 25 V | 20 V |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 175 C |
Pd Power Dissipation | - | 446 W | 150 W |
Tradename | - | MDmesh | - |
Fall Time | - | 10.4 ns | 20 ns |
Rise Time | - | 67 ns | 20 ns |
Typical Turn Off Delay Time | - | 112 ns | 65 ns |
Typical Turn On Delay Time | - | 32 ns | 30 ns |
Unit Weight | - | 1.340411 oz | 1.340411 oz |
Height | - | - | 20.15 mm |
Length | - | - | 15.75 mm |
Transistor Type | - | - | 1 N-Channel |
Width | - | - | 5.15 mm |