STW70N60DM2

Mfr. #:: STW70N60DM2
Manufacturer:: STMicroelectronics
Description:: MOSFET N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package
Lifecycle:: New from this manufacturer.
Datasheet:: STW70N60DM2 Datasheet
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More Information:: STW70N60DM2 more Information STW70N60DM2 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-247-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 66 A

Rds On - Drain-Source Resistance:: 42 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 25 V

Qg - Gate Charge:: 121 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 446 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: MDmesh

Series:: STW70N60DM2

Brand:: STMicroelectronics

Fall Time:: 10.4 ns

Product Type:: MOSFET

Rise Time:: 67 ns

Factory Pack Quantity:: 600

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 112 ns

Typical Turn-On Delay Time:: 32 ns

Unit Weight:: 1.340411 oz

Tags: STW70N60D, STW70N60, STW70N6, STW70N, STW70, STW7, STW

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STW70N60DM2 Description

***icroelectronics: N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package

***ical: Trans MOSFET N-CH 600V 66A 3-Pin(3+Tab) TO-247 Tube

***enic: 600V 66A 446W 42m´Î@10V33A 5V@250Ã×A N Channel TO-247AC MOSFETs ROHS

***ark: MOSFET, N-CH, 600V, 66A, 150DEG C, 446W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:66A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***el Electronic: IC TXRX T1/E1 QUAD 3.3V 256-BGA

***icroelectronics SCT: Power MOSFETs, 600V, 66A, TO-247, Tube

***icroelectronics: N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package

***ure Electronics: STW70N60 Series 600 V 0.040 Ohm Flange Mount N-Channel Power Mosfet - TO-247

***ark: MOSFET, N-CH, 600V, 68A, 150DEG C, 450W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:68A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 68A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***emi: N-Channel Power MOSFET, SUPREMOS®, FRFET®, 600 V, 72.8 A, 38 mΩ, TO-247

***r Electronics: Power Field-Effect Transistor, 72.8A I(D), 600V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***nell: MOSFET, N CH, 600V, 72.8A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:72.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0287ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SupreMOS FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 77 A, 41 mΩ, TO-247

***ure Electronics: Single N-Channel 600 V 41 mOhm 380 nC 592 W Silicon Through Hole Mosfet TO-247-3

*** Source Electronics: Trans MOSFET N-CH 600V 77A 3-Pin(3+Tab) TO-247 Tube / MOSFET N CH 600V 77A TO-247

***roFlash: Power Field-Effect Transistor, 77A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***rchild Semiconductor: SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency

***ure Electronics: Single N-Channel 600 V 40 mOhm 107 nC CoolMOS Power Mosfet - TO-247-3

***ark: Mosfet, N-Ch, 600V, 50A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***ure Electronics: IPW60R041P6 Series 600 V 77.5 A CoolMOS P6 Power Transistor - TO-247-3

***ark: MOSFET, N-CH, 600V, 77.5A, 150DEG C/481W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:77.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS

***nell: MOSFET, N-CH, 600V, 77.5A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 77.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 481W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P6 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***icroelectronics: N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package

***ure Electronics: N-Channel 600 V 60 mOhm Flange Mount MDmesh DM2 Power Mosfet - TO-247

***ark: MOSFET, N-CH, 600V, 50A, 150DEG C, 360W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

STW70N60DM2 More Information

MDmesh DM2 Power MOSFETs: STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

Part #	Mfg.	Description	Stock	Price
STW70N60DM2 DISTI # V36:1790_13795944	STMicroelectronics	Trans MOSFET N-CH 600V 66A 3-Pin(3+Tab) TO-247 Tube	1	510:$6.3380 120:$7.3680 30:$8.5660 10:$8.9800 1:$10.9153
STW70N60DM2 DISTI # 497-16345-5-ND	STMicroelectronics	MOSFET N-CH 600V 66A RoHS: Compliant Min Qty: 1 Container: Tube	239In Stock	510:$6.8355 120:$7.8498 30:$9.0407 10:$9.4820 1:$10.5000
STW70N60DM2 DISTI # 33598844	STMicroelectronics	Trans MOSFET N-CH 600V 66A 3-Pin(3+Tab) TO-247 Tube	150	2:$5.7567
STW70N60DM2 DISTI # STW70N60DM2	STMicroelectronics	Trans MOSFET N-CH 600V 66A 3-Pin TO-247 Tube (Alt: STW70N60DM2) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 180	1000:€5.0900 500:€5.3900 100:€5.5900 50:€5.7900 25:€6.0900 10:€6.2900 1:€6.8900
STW70N60DM2 DISTI # STW70N60DM2	STMicroelectronics	Trans MOSFET N-CH 600V 66A 3-Pin TO-247 Tube - Rail/Tube (Alt: STW70N60DM2) RoHS: Not Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$5.2900 3600:$5.3900 2400:$5.6900 1200:$5.9900 600:$6.1900
STW70N60DM2 DISTI # 79Y9483	STMicroelectronics	MOSFET, N-CH, 600V, 66A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:66A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes	483	500:$6.5800 250:$7.2100 100:$7.5400 50:$8.1200 25:$8.7000 10:$9.1200 1:$10.0900
STW70N60DM2 DISTI # 511-STW70N60DM2	STMicroelectronics	MOSFET N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package RoHS: Compliant	1213	1:$9.9900 10:$9.0300 25:$8.6100 100:$7.4700 250:$7.1400 500:$6.5100 1000:$5.6700
STW70N60DM2 DISTI # 1116487P	STMicroelectronics	MOSFET N-CH 600V 66A MDMESH DM2 TO-247, TU	180	300:£6.1700 90:£6.7500 30:£7.3600 10:£7.6900
STW70N60DM2 DISTI # STW70N60DM2	STMicroelectronics	Transistor: N-MOSFET,unipolar,600V,42A,446W,TO247	28	30:$9.9100 10:$11.0400 3:$13.7600 1:$15.9500
STW70N60DM2 DISTI # 2531122	STMicroelectronics	MOSFET, N-CH, 600V, 66A, TO-247 RoHS: Compliant	484	500:$9.8100 250:$10.7600 100:$11.2600 25:$12.9800 10:$13.6100 1:$15.0500
STW70N60DM2 DISTI # 2531122	STMicroelectronics	MOSFET, N-CH, 600V, 66A, TO-247	565	100:£5.7600 50:£6.2000 10:£6.6400 5:£7.7000 1:£8.2600

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STW70N60DM2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes