STW70N60M

STW70N60M2 vs STW70N60M2-4

 
PartNumberSTW70N60M2STW70N60M2-4
DescriptionMOSFET N-CH 600V 0.031Ohm typ. 68A MDmesh M2MOSFET N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in a TO247-4 package
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSY-
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current68 A68 A
Rds On Drain Source Resistance30 mOhms30 mOhms
Vgs th Gate Source Threshold Voltage3 V2 V
Vgs Gate Source Voltage25 V25 V
Qg Gate Charge118 nC118 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation450 W450 W
ConfigurationSingleSingle
TradenameMDmeshMDmesh
PackagingTube-
SeriesSTW70N60M2STW70N60M2-4
Transistor Type1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics
Fall Time9 ns9 ns
Product TypeMOSFETMOSFET
Rise Time17 ns17 ns
Factory Pack Quantity600600
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time155 ns155 ns
Typical Turn On Delay Time32 ns32 ns
Unit Weight1.340411 oz-
Channel Mode-Enhancement
Forward Transconductance Min--
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STW70N60M2 MOSFET N-CH 600V 0.031Ohm typ. 68A MDmesh M2
STW70N60M2-4 MOSFET N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in a TO247-4 package
STW70N60M2-4 POWER MOSFET
STW70N60M2 MOSFET N-CH 600V 68A TO247
STW70N60M2-4 70N60M2 New and Original
STW70N60M2 70N60M2 New and Original
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