STY100N

STY100NM60N vs STY100NS20FD

 
PartNumberSTY100NM60NSTY100NS20FD
DescriptionMOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FETMOSFET N-Ch 200 Volt 100 A
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseMax247-3Max247-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V200 V
Id Continuous Drain Current74 A100 A
Rds On Drain Source Resistance29 mOhms24 mOhms
Vgs th Gate Source Threshold Voltage4 V-
Vgs Gate Source Voltage25 V20 V
Pd Power Dissipation625 W450 W
ConfigurationSingleSingle
TradenameMDmesh-
PackagingTubeTube
SeriesSTY100NM60NSTY100NS20FD
Transistor Type1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFET
Factory Pack Quantity600600
SubcategoryMOSFETsMOSFETs
Unit Weight1.340411 oz1.340411 oz
Minimum Operating Temperature-- 65 C
Maximum Operating Temperature-+ 150 C
Channel Mode-Enhancement
Height-20.3 mm
Length-15.9 mm
Type-MOSFET
Width-5.3 mm
Fall Time-140 ns
Rise Time-140 ns
Typical Turn On Delay Time-42 ns
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STY100NM60N MOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FET
STY100NS20FD MOSFET N-Ch 200 Volt 100 A
STY100NM60N MOSFET N CH 600V 98A MAX247
STY100NS20FD MOSFET N-CH 200V 100A MAX247
STY100NM60N 100NM60N New and Original
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