PartNumber | SIZF906DT-T1-GE3 | SIZF300DT-T1-GE3 | SIZF914DT-T1-GE3 |
Description | MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5 | MOSFET 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3 | MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 5F |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerPAIR-6x5-8 | PowerPAIR3x3-4 | PowerPAIR-6x5F-8 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel, NPN |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 25 V |
Id Continuous Drain Current | 60 A | 75 A, 141 A | 40 A, 60 A |
Rds On Drain Source Resistance | 3 mOhms, 900 uOhms | 4.5 mOhms, 1.84 mOhms | 6.2 mOhms, 1.5 mOhms |
Vgs th Gate Source Threshold Voltage | 1.1 V | 1 V, 1.1 V | 1.1 V |
Vgs Gate Source Voltage | - 16 V, 20 V | - 16 V, 20 V, - 12 V, 16 V | 4.5 V |
Qg Gate Charge | 49 nC, 200 nC | 22 nC, 62 nC | 14 nC, 65 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 50 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 38 W, 83 W | 74 W | 26.6 W, 60 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | TrenchFET | TrenchFET | TrenchFET, SkyFET, PowerPAIR |
Packaging | Reel | Reel | Reel |
Series | SIZ | SIZ | SIZ |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 130 S, 130 S | 60 S, 90 S | 45 S, 105 S |
Fall Time | 40 ns, 30 ns | 7 ns, 12 ns | 10 ns, 15 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 80 ns, 60 ns | 40 ns, 53 ns | 50 ns, 60 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns, 65 ns | 23 ns, 30 ns | 15 ns, 45 ns |
Typical Turn On Delay Time | 20 ns, 45 ns | 17 ns, 25 ns | 20 ns, 32 ns |