PartNumber | TC58NYG0S3HBAI6 | TC58NYG1S3EBAI5 | TC58NYG0S3EBAI4 |
Description | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | NAND Flash 1.8V 2Gb 43nm SLC NAND (EEPROM) | NAND Flash 1.8V 1Gb 43nm SLC NAND (EEPROM) |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | NAND Flash | NAND Flash | NAND Flash |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | VFBGA-67 | TFBGA-63 | TFBGA-63 |
Memory Size | 1 Gbit | 2 Gbit | 1 Gbit |
Interface Type | Parallel | Parallel | Parallel |
Organization | 128 M x 8 | 256 M x 8 | 128 M x 8 |
Data Bus Width | 8 bit | 8 bit | 8 bit |
Supply Voltage Min | 1.7 V | 1.7 V | 1.7 V |
Supply Voltage Max | 1.95 V | 1.95 V | 1.95 V |
Supply Current Max | 30 mA | 30 mA | 30 mA |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
Packaging | Tray | Tray | Tray |
Memory Type | NAND | NAND | NAND |
Brand | Toshiba Memory | Toshiba Memory | Toshiba Memory |
Maximum Clock Frequency | - | - | - |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | NAND Flash | NAND Flash | NAND Flash |
Factory Pack Quantity | 338 | 180 | 210 |
Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
Timing Type | - | Synchronous | Synchronous |
Product | - | NAND Flash | NAND Flash |
Speed | - | 25 ns | 25 ns |
Architecture | - | Block Erase | Block Erase |