TH58NY

TH58NYG3S0HBAI4 vs TH58NYG2S3HBAI4 vs TH58NYG2S3HBAI6

 
PartNumberTH58NYG3S0HBAI4TH58NYG2S3HBAI4TH58NYG2S3HBAI6
DescriptionNAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
ManufacturerToshibaToshibaToshiba
Product CategoryNAND FlashNAND FlashNAND Flash
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTFBGA-63TFBGA-63VFBGA-67
Memory Size8 Gbit4 Gbit4 Gbit
Interface TypeParallelParallelParallel
Organization1 G x 8512 M x 8512 M x 8
Timing TypeSynchronousSynchronous-
Data Bus Width8 bit8 bit8 bit
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Voltage Max1.95 V1.95 V1.95 V
Supply Current Max30 mA30 mA-
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
PackagingTrayTrayTray
Memory TypeNANDNANDNAND
BrandToshiba MemoryToshiba MemoryToshiba Memory
Moisture SensitiveYesYesYes
Product TypeNAND FlashNAND FlashNAND Flash
Factory Pack Quantity210210210
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Product-NAND Flash-
Speed-25 ns-
Architecture-Block Erase-
Maximum Clock Frequency---
Manufacturer Part # Description RFQ
Toshiba Memory
Toshiba Memory
TH58NYG3S0HBAI4 NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
TH58NYG2S3HBAI4 NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
TH58NYG3S0HBAI6 NAND Flash 1.95V 8Gb 24nm SLC NAND (EEPROM)
TH58NYG2S3HBAI6 NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
TH58NYG2S3HBAI4 Flash Memory 4Gb 1.8V IC Flash NAND EEPROM
TH58NYG3S0HBAI4 8GB SLC NAND 24NM BGA 9X11 3.3V
TH58NYG4S0FBAID New and Original
TH58NYG4S5FBAID New and Original
TH58NYG2S3HBAI4-ND New and Original
TH58NYG3S0HBAI4-ND New and Original
TH58NYG3S0HBAI6 NAND Flash Serial 1.8V 8G-bit 1G x 8 67-Pin VFBGA
TH58NYG3S0HBAI6-ND New and Original
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