TK31J60W,S

TK31J60W,S1VQ vs TK31J60W,S1VQ(O) vs TK31J60W,S1VQ(O

 
PartNumberTK31J60W,S1VQTK31J60W,S1VQ(O)TK31J60W,S1VQ(O
DescriptionMOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nCMOSFETs
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current30.8 A--
Rds On Drain Source Resistance88 mOhms--
Vgs Gate Source Voltage10 V--
Qg Gate Charge105 nC--
Pd Power Dissipation230 W--
ConfigurationSingle--
TradenameDTMOSIV--
Height20 mm--
Length15.5 mm--
SeriesTK31J60W--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity25--
SubcategoryMOSFETs--
Unit Weight0.245577 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TK31J60W,S1VQ MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
TK31J60W,S1VQ Darlington Transistors MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
TK31J60W,S1VQ(O) MOSFETs
TK31J60W,S1VQ(O New and Original
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