PartNumber | TPS1100D | TPS1100DR | TPS1100DG4 |
Description | MOSFET MOSFET 10ns RT | MOSFET Single P-Ch Enh-Mode MOSFET | MOSFET Single P-Ch Enh-Mode MOSFET |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOIC-8 | SOIC-8 | SOIC-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 15 V | 15 V | 15 V |
Id Continuous Drain Current | 1.6 A | 1.6 A | 1.6 A |
Rds On Drain Source Resistance | 180 mOhms | 400 mOhms | 180 mOhms |
Vgs Gate Source Voltage | 15 V | 2 V, - 15 V | 2 V, - 15 V |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 85 C | + 125 C | + 125 C |
Pd Power Dissipation | 791 mW | 791 mW | 791 mW |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Reel | Tube |
Height | 1.75 mm | 1.75 mm | 1.75 mm |
Length | 4.9 mm | 4.9 mm | 4.9 mm |
Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
Series | TPS1100 | TPS1100 | TPS1100 |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Type | MOSFET | PMOS Switches | PMOS Switches |
Width | 3.9 mm | 3.9 mm | 3.9 mm |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Forward Transconductance Min | 2.5 S | - | - |
Fall Time | 10 ns | 10 ns | 10 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 10 ns | 10 ns | 10 ns |
Factory Pack Quantity | 75 | 2500 | 75 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 13 ns | 13 ns | 13 ns |
Typical Turn On Delay Time | 4.5 ns | 4.5 ns | 4.5 ns |
Unit Weight | 0.002677 oz | 0.002677 oz | 0.002677 oz |