PartNumber | US6M2TR | US6M2TR , MAX6755UKTD3 |
Description | MOSFET N+P 20V 1.5A/1A | |
Manufacturer | ROHM Semiconductor | - |
Product Category | MOSFET | - |
RoHS | Y | - |
Technology | Si | - |
Mounting Style | SMD/SMT | - |
Package / Case | SOT-363T-6 | - |
Number of Channels | 2 Channel | - |
Transistor Polarity | N-Channel, P-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V, 30 V | - |
Id Continuous Drain Current | 1 A, 1.5 A | - |
Rds On Drain Source Resistance | 240 mOhms, 390 mOhms | - |
Vgs th Gate Source Threshold Voltage | 700 mV, 500 mV | - |
Vgs Gate Source Voltage | 4.5 V | - |
Qg Gate Charge | 1.6 nC, 2.1 nC | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 1 W | - |
Configuration | Dual | - |
Channel Mode | Enhancement | - |
Packaging | Reel | - |
Height | 0.77 mm | - |
Length | 2 mm | - |
Series | US6M2 | - |
Transistor Type | 1 N-Channel MOSFET, 1 P-Channel MOSFET | - |
Type | MOSFET | - |
Width | 1.7 mm | - |
Brand | ROHM Semiconductor | - |
Fall Time | 6 ns, 10 ns | - |
Product Type | MOSFET | - |
Rise Time | 9 ns, 8 ns | - |
Factory Pack Quantity | 3000 | - |
Subcategory | MOSFETs | - |
Typical Turn Off Delay Time | 15 ns, 25 ns | - |
Typical Turn On Delay Time | 7 ns, 9 ns | - |
Part # Aliases | US6M2 | - |
Unit Weight | 0.000265 oz | - |