VN2210N

VN2210N2 vs VN2210N3-G vs VN2210N3

 
PartNumberVN2210N2VN2210N3-GVN2210N3
DescriptionMOSFET 100V 0.35OhmMOSFET 100V 0.35OhmMOSFET 100V 0.35Ohm
ManufacturerMicrochipMicrochip-
Product CategoryMOSFETMOSFET-
RoHSTY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-39-3TO-92-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current1.7 A1.2 A-
Rds On Drain Source Resistance350 mOhms4 Ohms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation6 W1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingBulkBulk-
Height6.6 mm5.33 mm-
Length9.4 mm5.21 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeFETFET-
Width9.4 mm4.19 mm-
BrandMicrochip TechnologyMicrochip Technology-
Fall Time30 ns30 ns-
Product TypeMOSFETMOSFET-
Rise Time10 ns10 ns-
Factory Pack Quantity5001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time50 ns50 ns-
Typical Turn On Delay Time10 ns10 ns-
Unit Weight0.039133 oz0.015873 oz-
Manufacturer Part # Description RFQ
Microchip Technology
Microchip Technology
VN2210N2 MOSFET 100V 0.35Ohm
VN2210N3-G MOSFET 100V 0.35Ohm
VN2210N3 MOSFET 100V 0.35Ohm
VN2210N3-G MOSFET N-CH 100V 1.2A TO92-3
VN2210N2 MOSFET N-CH 100V 1.7A TO39-3
VN2210N3-G P002 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P014 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P003 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P005 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P013 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
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