 | | | |
| PartNumber | VS-GB100TH120N | VS-GB100TP120N | VS-GB100TH120U |
| Description | IGBT Modules Output & SW Modules - DIAP IGBT | IGBT Modules Output & SW Modules - IAP IGBT | Trans IGBT Module N-CH 1.2KV 200A 7-Pin Double INT-A-PAK |
| Manufacturer | Vishay | Vishay | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| Configuration | Half Bridge | Half Bridge | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | - |
| Collector Emitter Saturation Voltage | 1.9 V | 1.8 V | - |
| Continuous Collector Current at 25 C | 200 A | 200 A | - |
| Gate Emitter Leakage Current | 400 nA | 400 nA | - |
| Pd Power Dissipation | 833 W | 650 W | - |
| Package / Case | INT-A-PAK | INT-A-PAK | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Brand | Vishay Semiconductors | Vishay Semiconductors | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 12 | 24 | - |
| Subcategory | IGBTs | IGBTs | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay Semiconductors |
VS-GB100TS60NPBF | IGBT Modules 108 Amp 600 Volt Half-Bridge | |
| VS-GB100TH120N | IGBT Modules Output & SW Modules - DIAP IGBT | ||
| VS-GB100TP120N | IGBT Modules Output & SW Modules - IAP IGBT | ||
Vishay |
VS-GB100TH120N | IGBT 1200V 200A 833W INT-A-PAK | |
| VS-GB100TH120U | Trans IGBT Module N-CH 1.2KV 200A 7-Pin Double INT-A-PAK | ||
| VS-GB100TP120N | IGBT 1200V 200A 650W INT-A-PAK | ||
| VS-GB100TP120U | IGBT 1200V 150A 735W INT-A-PAK | ||
| VS-GB100TS60NPBF | IGBT Modules 108 Amp 600 Volt Half-Bridge |