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| PartNumber | ZXM61P03FTA | ZXM61P03F | ZXM61P03FTA- |
| Description | MOSFET 30V P-Chnl HDMOS | P CHANNEL MOSFET, -30V, 1.1A SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:1.1A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.35ohm, Rds(on) Test Voltage Vgs:-10V, | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 1.1 A | - | - |
| Rds On Drain Source Resistance | 350 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 4.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 806 mW | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.02 mm | - | - |
| Length | 3.04 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | ZXM61P03 | ZXM61P03 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Type | MOSFET | - | - |
| Width | 1.4 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 0.44 S | - | - |
| Fall Time | 5 ns | 2.9 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.9 ns | 2.9 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 8.9 ns | 8.9 ns | - |
| Typical Turn On Delay Time | 1.9 ns | 1.9 ns | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Package Case | - | TO-236-3, SC-59, SOT-23-3 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-23-3 | - |
| FET Type | - | MOSFET P-Channel, Metal Oxide | - |
| Power Max | - | 625mW | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 140pF @ 25V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 1.1A (Ta) | - |
| Rds On Max Id Vgs | - | 350 mOhm @ 600mA, 10V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 4.8nC @ 10V | - |
| Pd Power Dissipation | - | 625 mW | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | - 1.1 A | - |
| Vds Drain Source Breakdown Voltage | - | - 30 V | - |
| Rds On Drain Source Resistance | - | 550 mOhms | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXM61P03FTA | MOSFET 30V P-Chnl HDMOS | |
| ZXM61P03FTC | MOSFET 30V P Chnl HDMOS | ||
| ZXM61P03F | P CHANNEL MOSFET, -30V, 1.1A SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:1.1A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.35ohm, Rds(on) Test Voltage Vgs:-10V, | ||
| ZXM61P03FTA | New and Original | ||
| ZXM61P03FTA- | New and Original | ||
| ZXM61P03FTA/P03 | New and Original | ||
| ZXM61P03FTC | MOSFET P-CH 30V 1.1A SOT23-3 | ||
| ZXM61P03FTA-CUT TAPE | New and Original |