| PartNumber | ZXMC4559DN8TA | ZXMC4559DN8TC |
| Description | MOSFET Comp. 60V NP-Chnl | MOSFET 60V TRENCH MOSFET 20V VGS P-Channel |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 4.7 A | 3.6 A, 2.6 A |
| Rds On Drain Source Resistance | 75 mOhms | 55 mOhms, 125 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2.1 W | 1.25 W |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1.5 mm | - |
| Length | 5 mm | - |
| Series | ZXMC45 | ZXMC4 |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel |
| Width | 4 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 10.6 ns, 10 ns | 10.6 ns, 10 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 4.1 ns | 4.1 ns, 4.1 ns |
| Factory Pack Quantity | 500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26.2 ns, 35 ns | 26.2 ns, 35 ns |
| Typical Turn On Delay Time | 3.5 ns | 3.5 ns, 3.5 ns |
| Unit Weight | 0.002610 oz | 0.002610 oz |
| Vgs th Gate Source Threshold Voltage | - | 1 V |
| Qg Gate Charge | - | 20.4 nC, 12.1 nC |
| Forward Transconductance Min | - | 10.2 S, 7.2 S |