ZXMD65P02N

ZXMD65P02N8TA vs ZXMD65P02N8 vs ZXMD65P02N8TC

 
PartNumberZXMD65P02N8TAZXMD65P02N8ZXMD65P02N8TC
DescriptionMOSFET Dl 20V P-Chnl HDMOSMOSFET 2P-CH 20V 4A 8SOIC
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHST--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5.1 A--
Rds On Drain Source Resistance80 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelRTape & Reel (TR)
ProductMOSFET Small Signal--
Transistor Type2 P-Channel--
TypeMOSFET--
BrandDiodes Incorporated--
Fall Time29.9 ns--
Product TypeMOSFET--
Rise Time29.9 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time57.9 ns--
Typical Turn On Delay Time6.6 ns--
Unit Weight0.002610 oz--
Series---
Package Case-8-SOIC (0.154", 3.90mm Width)8-SOIC (0.154", 3.90mm Width)
Operating Temperature---
Mounting Type-Surface MountSurface Mount
Supplier Device Package-8-SO8-SOP
FET Type-2 P-Channel (Dual)2 P-Channel (Dual)
Power Max-1.75W1.75W
Drain to Source Voltage Vdss-20V20V
Input Capacitance Ciss Vds-960pF @ 15V960pF @ 15V
FET Feature-StandardStandard
Current Continuous Drain Id 25°C-4A4A
Rds On Max Id Vgs-50 mOhm @ 2.9A, 4.5V50 mOhm @ 2.9A, 4.5V
Vgs th Max Id-700mV @ 250μA (Min)700mV @ 250μA (Min)
Gate Charge Qg Vgs-20nC @ 4.5V20nC @ 4.5V
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMD65P02N8TA MOSFET Dl 20V P-Chnl HDMOS
ZXMD65P02N8 New and Original
ZXMD65P02N8TA MOSFET 2P-CH 20V 4A 8-SOIC
ZXMD65P02N8TC MOSFET 2P-CH 20V 4A 8SOIC
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