PartNumber | ZXMN10A08E6TA | ZXMN10A08DN8TA | ZXMN10A08E6TC |
Description | MOSFET 100V N-Chnl UMOS | MOSFET 100V 2.1A N-Channel Enhancement MOSFET | MOSFET 100V N-Chnl UMOS |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-26-6 | SO-8 | SOT-26-6 |
Number of Channels | 1 Channel | 2 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 1.9 A | 2.1 A | 1.9 A |
Rds On Drain Source Resistance | 250 mOhms | 250 mOhms | 250 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 7.7 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.1 W | 1.8 W | 1.1 W |
Configuration | Single | Dual | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 1.3 mm | 1.5 mm | 1.3 mm |
Length | 3.1 mm | 5 mm | 3.1 mm |
Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
Series | ZXMN10A | ZXMN10 | ZXMN10 |
Transistor Type | 1 N-Channel | 2 N-Channel | 1 N-Channel |
Type | MOSFET | - | MOSFET |
Width | 1.8 mm | 4 mm | 1.8 mm |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Forward Transconductance Min | 5 S | - | - |
Fall Time | 2.2 ns | 2.2 ns | 2.2 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 2.2 ns | 2.2 ns | 2.2 ns |
Factory Pack Quantity | 3000 | 500 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 8 ns | 8 ns | 8 ns |
Typical Turn On Delay Time | 3.4 ns | 3.4 ns | 3.4 ns |
Unit Weight | 0.000529 oz | 0.002610 oz | 0.000529 oz |