ZXMN10A1

ZXMN10A11GTA vs ZXMN10A11G vs ZXMN10A11GTA-CUT TAPE

 
PartNumberZXMN10A11GTAZXMN10A11GZXMN10A11GTA-CUT TAPE
DescriptionMOSFET 100V N-Chnl UMOSMOSFET, N CHANNEL, 100V, 2.4A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.6ohm, Rds(on) Test Voltage Vgs:10V,
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current2.4 A--
Rds On Drain Source Resistance350 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge5.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.65 mm--
Length6.7 mm--
SeriesZXMN10A--
Transistor Type1 N-Channel--
TypeMOSFET--
Width3.7 mm--
BrandDiodes Incorporated--
Forward Transconductance Min4 S--
Fall Time3.5 ns--
Product TypeMOSFET--
Rise Time1.7 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time7.4 ns--
Typical Turn On Delay Time2.7 ns--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN10A11KTC MOSFET N-Chan 100V MOSFET (UMOS)
ZXMN10A11GTA MOSFET 100V N-Chnl UMOS
ZXMN10A11G MOSFET, N CHANNEL, 100V, 2.4A, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.6ohm, Rds(on) Test Voltage Vgs:10V,
ZXMN10A11GTA-CUT TAPE New and Original
ZXMN10A11KTC-CUT TAPE New and Original
ZXMN10A11GTA Darlington Transistors MOSFET 100V N-Chnl UMOS
ZXMN10A11KTC Darlington Transistors MOSFET N-Chan 100V MOSFET (UMOS)
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