ZXMP10A17E

ZXMP10A17E6TA vs ZXMP10A17E6QTA vs ZXMP10A17E6

 
PartNumberZXMP10A17E6TAZXMP10A17E6QTAZXMP10A17E6
DescriptionMOSFET 100V P-Chanl UMOSTrans MOSFET P-CH 100V 1.6A Automotive 6-Pin SOT-26 T/R
ManufacturerDiodes IncorporatedDiodes IncorporatedDIODES
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-26-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current1.6 A--
Rds On Drain Source Resistance350 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge10.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.7 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Height1.3 mm--
Length3.1 mm--
SeriesZXMP10A--
Transistor Type1 P-Channel--
Width1.8 mm--
BrandDiodes Incorporated--
Forward Transconductance Min2.8 S--
Fall Time7.2 ns--
Product TypeMOSFET--
Rise Time3.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13.4 ns--
Typical Turn On Delay Time3 ns--
Unit Weight0.000529 oz--
Package Case-SOT-23-6-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-26-
FET Type-MOSFET P-Channel, Metal Oxide-
Power Max-1.1W-
Drain to Source Voltage Vdss-100V-
Input Capacitance Ciss Vds-424pF @ 50V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-1.3A (Ta)-
Rds On Max Id Vgs-350 mOhm @ 1.4A, 10V-
Vgs th Max Id-4V @ 250μA-
Gate Charge Qg Vgs-10.7nC @ 10V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMP10A17E6TA MOSFET 100V P-Chanl UMOS
ZXMP10A17E6QTA Trans MOSFET P-CH 100V 1.6A Automotive 6-Pin SOT-26 T/R
ZXMP10A17E6TA Trans MOSFET P-CH 100V 1.6A Automotive 6-Pin SOT-26 T/R
ZXMP10A17E6TA-CUT TAPE New and Original
ZXMP10A17E6 New and Original
Top