 | |  | |
| PartNumber | ZXMP10A17GQTC | ZXMP10A17GQTA | ZXMP10A17G |
| Description | MOSFET MOSFET BVDSS: 61V-100V | MOSFET MOSFET BVDSS | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-3 | SOT-223-3 | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 4000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.009171 oz | 0.003951 oz | - |
| RoHS | - | Y | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 2.4 A | - |
| Rds On Drain Source Resistance | - | 450 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 10.7 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 3.9 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Series | - | ZXMP10A | - |
| Transistor Type | - | 1 P-Channel | - |
| Forward Transconductance Min | - | 2.8 S | - |
| Fall Time | - | 7.2 ns | - |
| Rise Time | - | 3.5 ns | - |
| Typical Turn Off Delay Time | - | 13.4 ns | - |
| Typical Turn On Delay Time | - | 3 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMP10A17GQTC | MOSFET MOSFET BVDSS: 61V-100V | |
| ZXMP10A17GTA | MOSFET 100V P-Chnl UMOS | ||
| ZXMP10A17GQTA | MOSFET MOSFET BVDSS | ||
| ZXMP10A17G | New and Original | ||
| ZXMP10A17GQTA | MOSFET P-CH 100V SOT223 | ||
| ZXMP10A17GTA | Trans MOSFET P-CH 100V 2.4A Automotive 4-Pin(3+Tab) TO-261AA T/R |