PartNumber | ZXMP6A16DN8TA | ZXMP6A16DN8QTA | ZXMP6A16DN8 |
Description | MOSFET Dl 60V P-Chnl UMOS | MOSFET Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | ZETEX |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 3.9 A | 3.9 A | - |
Rds On Drain Source Resistance | 125 mOhms | 125 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2.15 W | 2.15 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 1.5 mm | - | - |
Length | 5 mm | - | - |
Series | ZXMC6A | ZXMN6 | - |
Transistor Type | 2 P-Channel | 2 P-Channel | - |
Width | 4 mm | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Fall Time | 10 ns | 10 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 4.1 ns | 4.1 ns | - |
Factory Pack Quantity | 500 | 500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 35 ns | 35 ns | - |
Typical Turn On Delay Time | 3.5 ns | 3.5 ns | - |
Unit Weight | 0.002610 oz | 0.002610 oz | - |
Vgs th Gate Source Threshold Voltage | - | 1 V | - |
Qg Gate Charge | - | 24.2 nC | - |
Qualification | - | AEC-Q101 | - |
Forward Transconductance Min | - | 7.2 S | - |