ZXMP6A16DN8QTA

ZXMP6A16DN8QTA
Mfr. #:
ZXMP6A16DN8QTA
Manufacturer:
Diodes Incorporated
Description:
MOSFET Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF
Lifecycle:
New from this manufacturer.
Datasheet:
ZXMP6A16DN8QTA Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
ZXMP6A16DN8QTA DatasheetZXMP6A16DN8QTA Datasheet (P4-P6)ZXMP6A16DN8QTA Datasheet (P7-P8)
ECAD Model:
More Information:
ZXMP6A16DN8QTA more Information
Product Attribute
Attribute Value
Manufacturer:
Diodes Incorporated
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
2 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
3.9 A
Rds On - Drain-Source Resistance:
125 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
24.2 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.15 W
Configuration:
Dual
Channel Mode:
Enhancement
Qualification:
AEC-Q101
Packaging:
Reel
Series:
ZXMN6
Transistor Type:
2 P-Channel
Brand:
Diodes Incorporated
Forward Transconductance - Min:
7.2 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
4.1 ns
Factory Pack Quantity:
500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
35 ns
Typical Turn-On Delay Time:
3.5 ns
Unit Weight:
0.002610 oz
Tags
ZXMP6A16D, ZXMP6A16, ZXMP6, ZXMP, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual P-CH 60V 3.9A 8-Pin SOIC T/R
***des Inc SCT
Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS
***ure Electronics
P-Channel (Dual) 60 V 2.9 A 85 mOhm SMT Enhancement Mode Mosfet - SO-8
***ical
Trans MOSFET P-CH 60V 2.9A Automotive 8-Pin SO T/R
***et
Transistor MOSFET Array Dual N-CH 60V 4.1A 8-Pin SOIC T/R
***ure Electronics
DMN6070 Series 60 V 3.3 A 80 mOhm Dual N-Ch. Enhancement Mode Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET Dual N-Ch 60V 4.1A Enhanc. SOIC8
***ark
Mosfet, Dual, N-Ch, 60V, 3.3A Rohs Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.3A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***et Europe
Transistor MOSFET Array Dual P 60V 3.2A 8-Pin PowerPAK SO
***ure Electronics
Dual P-Channel 60 V 0.064 Ohms Surface Mount Power Mosfet - PowerPAK SO-8
***nell
MOSFET, PP CH, 60V, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.2A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK; No. of Pins:8
***et
Transistor MOSFET Array Dual P-CH 60V 3.2A 8-Pin PowerPAK SO T/R
***enic
60V 3.2A 1.5W 64m´Î@10V5A 3V@250Ã×A 2 P-Channel PowerPAK SO-8 MOSFETs ROHS
***nell
MOSFET, DUAL, P-CH, 60V, 5A, SOIC;
***C
MOSFET 2P-CH 60V 3.2A PPAK SO-8
***mal
DUAL P-CHANNEL 60-V (D-S) MOSFET
***ronik
DUAL P-CH 60V 5A 64mOhm PPSO-8
***ment14 APAC
DUAL P CHANNEL MOSFET, -60V, 5A; Transis; DUAL P CHANNEL MOSFET, -60V, 5A; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-3.2A; Drain Source Voltage Vds, P Channel:-60V; On Resistance Rds(on), P Channel:0.051ohm; Rds(on) Test Voltage Vgs:10V
***Yang
Transistor MOSFET Array Dual N-CH 60V 3.5A 8-Pin SOIC T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET, 60V, 3.5A, 100mΩ
***ure Electronics
Dual N-Channel 60 V 2 W 13 nC PowerTrench Surface Mount Mosfet - SOIC-8
***rchild Semiconductor
These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***ure Electronics
P-Channel 60 V 150 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
*** Electronics
In a Pack of 5, P-Channel MOSFET, 3 A, 60 V, 8-Pin SOIC ON Semiconductor NDS9407
***emi
60V P-Channel PowerTrench® MOSFET -3.0A, 150mΩ
*** Source Electronics
Trans MOSFET P-CH 60V 3A 8-Pin SOIC T/R / MOSFET P-CH 60V 3A 8-SOIC
***ment14 APAC
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-3A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-1.6V; Voltage Vgs Rds on Measurement:-10V
***rchild Semiconductor
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
***emi
Dual N-Channel Enhancement Mode Field Effect Transistor 60V, 3.5A, 100mΩ
***Yang
Transistor MOSFET Array Dual N-CH 60V 3.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r
***ure Electronics
Dual N-Channel 60 V 0.3 Ohm 30 nC 2 W DMOS Surface Mount Mosfet - SOIC-8
***ark
Dual Mosfet, Dual N Channel, 3.5 A, 60 V, 100 Mohm, 10 V, 1.7 V Rohs Compliant: Yes
***ment14 APAC
Transistor, MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Source Voltage Vds:60V; On Resistance Rds(on):0.1ohm;
***rchild Semiconductor
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
***nell
TRANSISTOR, MOSFET; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V
Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.
Part # Mfg. Description Stock Price
ZXMP6A16DN8QTA
DISTI # 26572898
Zetex / Diodes IncTrans MOSFET P-CH 60V 3.9A Automotive 8-Pin SO T/R500
  • 500:$0.5125
ZXMP6A16DN8QTA
DISTI # ZXMP6A16DN8QTADICT-ND
Diodes IncorporatedMOSFET 2P-CH 60V 2.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1058In Stock
  • 100:$1.1381
  • 10:$1.4400
  • 1:$1.6300
ZXMP6A16DN8QTA
DISTI # ZXMP6A16DN8QTADIDKR-ND
Diodes IncorporatedMOSFET 2P-CH 60V 2.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1058In Stock
  • 100:$1.1381
  • 10:$1.4400
  • 1:$1.6300
ZXMP6A16DN8QTA
DISTI # ZXMP6A16DN8QTADITR-ND
Diodes IncorporatedMOSFET 2P-CH 60V 2.9A 8-SOIC
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
1000In Stock
  • 500:$0.8569
ZXMP6A16DN8QTA
DISTI # ZXMP6A16DN8QTA
Diodes IncorporatedMOSFET 2P-CH 60V 2.9A 8-SOIC - Tape and Reel (Alt: ZXMP6A16DN8QTA)
RoHS: Not Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$0.5879
  • 1000:$0.5589
  • 2000:$0.5329
  • 3000:$0.5089
  • 5000:$0.4979
ZXMP6A16DN8QTA
DISTI # 621-ZXMP6A16DN8QTA
Diodes IncorporatedMOSFET Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF
RoHS: Compliant
230
  • 1:$1.3500
  • 10:$1.1500
  • 100:$0.8820
  • 500:$0.7800
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Availability
Stock:
723
On Order:
2706
Enter Quantity:
Current price of ZXMP6A16DN8QTA is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.34
$1.34
10
$1.14
$11.40
100
$0.88
$88.20
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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