ZXMP6A16DN8Q
Document number: DS36687 Rev. 2 - 2
4 of 8
www.diodes.com
December 2013
© Diodes Incorporated
ZXMP6A16DN8Q
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60
V
I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
-1.0 µA
V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1
V
I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 13)
R
DS (ON)
85
mΩ
V
GS
= -10V, I
D
= -2.9A
125
V
GS
= -4.5V, I
D
= -2.4A
Forward Transconductance (Notes 13 & 14)
g
fs
7.2
S
V
DS
= -15V, I
D
= -2.9A
Diode Forward Voltage (Note 13)
V
SD
-0.85 -0.95 V
I
S
= -3.4A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 14)
t
rr
29.2
ns
I
S
= -2A, di/dt = 100A/µs,
T
J
= +25°C
Reverse recovery charge (Note 14)
Q
rr
39.6
nC
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance
C
iss
1021
pF
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
83.1
pF
Reverse Transfer Capacitance
C
rss
56.4
pF
Total Gate Charge (Note 15)
Q
g
12.1
nC
V
GS
= -5V
V
DS
= -30V,
I
D
= -2.9A
Total Gate Charge (Note 15)
Q
g
24.2
nC
V
GS
= -10V
Gate-Source Charge (Note 15)
Q
gs
2.5
nC
Gate-Drain Charge (Note 15)
Q
gd
3.7
nC
Turn-On Delay Time (Note 15)
t
D(on)
3.5
ns
V
DD
= -30V, V
GS
= -10V,
I
D
= -1A, R
G
6Ω
Turn-On Rise Time (Note 15)
t
r
4.1
ns
Turn-Off Delay Time (Note 15)
t
D(off)
35
ns
Turn-Off Fall Time (Note 15)
t
f
10
ns
Notes: 13. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%
14. For design aid only, not subject to production testing.
15. Switching characteristics are independent of operating junction temperatures.
