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ZXMP6A16DN8QTA

P1-P3P4-P6P7-P8
ZXMP6A16DN8Q
Document number: DS36687 Rev. 2 - 2
1 of 8
www.diodes.com
December 2013
© Diodes Incorporated
ZXMP6A16DN8Q
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Max
I
D
T
A
= +25°C
(Notes 4 & 6)
-60V
85mΩ @ V
GS
= -10V
-3.9A
125mΩ @ V
GS
= -4.5V
-3.2A
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Disconnect Switches
Motor Control
Features
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Low Profile SOIC Package
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Available
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method
208
Weight: 0.074 grams (approximate)
Ordering Information
Part Number Qualification Case Packaging
ZXMP6A16DN8QTA Automotive SO-8 500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
e3
Equivalent Circuit
Top View
SO-8
Top View
D1S1
G1
S2
G2
D1
D2
D2
D
2
S2
G2
D
1
S1
G
1
ZXMP6A16D = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 11 = 2011)
WW = Week (01 - 53)
1
4
8
5
ZXMP
6A16D
Y
Y W
W
ZXMP6A16DN8Q
Document number: DS36687 Rev. 2 - 2
2 of 8
www.diodes.com
December 2013
© Diodes Incorporated
ZXMP6A16DN8Q
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage
V
DSS
-60 V
Gate-Source voltage (Note 6)
V
GS
20
V
Continuous Drain current
V
GS
= 10V
(Notes 8 & 10)
I
D
-3.9
A
T
A
= +70°C (Notes 8 & 10)
-3.1
(Notes 7 & 10) -2.9
Pulsed Drain current (Notes 9 & 10)
I
DM
-18.3 A
Continuous Source current (Body diode) (Notes 8 & 10)
I
S
-3.2 A
Pulsed Source current (Body diode) (Notes 9 & 10)
I
SM
-18.3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Notes 7 & 10)
P
D
1.25
10.0
W
mW/°C
(Notes 7 & 11)
1.81
14.5
(Notes 8 & 10)
2.15
17
Thermal Resistance, Junction to Ambient
(Notes 7 & 10)
R
θJA
100
°C/W
(Notes 7 & 11) 70
(Notes 8 & 10) 60
Thermal Resistance, Junction to Lead (Notes 10 & 12)
R
θJL
48.85
Operating and storage temperature range
T
J
, T
STG
-55 to +150 °C
Notes: 6. AEC-Q101 V
GS
maximum is 16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Same as note (7), except the device is measured at t 10 sec.
9. Same as note (7), except the device is pulsed with D = 0.02 and pulse width 300µs.
10. For a dual device with one active die.
11. For a device with two active die running at equal power.
12. Thermal resistance from junction to solder-point.
ZXMP6A16DN8Q
Document number: DS36687 Rev. 2 - 2
3 of 8
www.diodes.com
December 2013
© Diodes Incorporated
ZXMP6A16DN8Q
Thermal Characteristics
100m 1 10 100
10m
100m
1
10
Single Pulse
T
amb
=25°C
One active die
R
DS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
D
Drain Current (A)
-V
DS
Drain-Source Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Two active die
One active die
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
100
110
T
amb
=25°C
One active die
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
One active die
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
P1-P3P4-P6P7-P8

ZXMP6A16DN8QTA

Mfr. #:
Buy ZXMP6A16DN8QTA
Manufacturer:
Diodes Incorporated
Description:
MOSFET Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF
Lifecycle:
New from this manufacturer.
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