STP9NK80Z

Mfr. #:: STP9NK80Z
Manufacturer:: STMicroelectronics
Description:: MOSFET N-CH 800V 7.5A TO-220
Lifecycle:: New from this manufacturer.
Datasheet:: STP9NK80Z Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: STP9NK80Z Datasheet STP9NK80Z Datasheet (P4-P6)STP9NK80Z Datasheet (P7-P9)STP9NK80Z Datasheet (P10-P11)
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More Information:: STP9NK80Z more Information STP9NK80Z Product Details

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Tags: STP9NK, STP9N, STP9, STP

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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STP9NK80Z Description

***icroelectronics: N-CHANNEL 800V -0.9Ohm - 7.5A TO-220/TO-220FP

***ca Corp: Power Field-Effect Transistor, 7.5A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:800V; Continuous Drain Current, Id:7.5A; On Resistance, Rds(on):0.9ohm; Rds(on) Test Voltage, Vgs:30V; Threshold Voltage, Vgs Typ:3.75V ;RoHS Compliant: Yes

***icroelectronics: N-Channel 800V - 0.8 Ohm - 9A - TO-220FP Zener-Protected SuperMESH(TM) POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 800V 9A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 9A TO-220FP

***r Electronics: Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:40W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:6A; Current Id Max:9A; On State resistance @ Vgs = 10V:900mohm; Package / Case:TO-220FP; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:36A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V

***emi: Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F

***Yang: Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***enic: 800V 8A 59W 1.55´Î@10V4A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

*** Stop Electro: Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:59W; Power Dissipation Pd:59W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***emi: Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F

***Yang: Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***icroelectronics: N-CHANNEL 700 V - 0.75 OHM - 8.6 A TO-220FP ZENER-PROTECTED SuperMESH POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 700V 8.6A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 700V 8.6A TO-220FP

***el Electronic: STMICROELECTRONICS STP10NK70ZFP Power MOSFET, N Channel, 4.5 A, 700 V, 750 mohm, 10 V, 3.75 V

***enic: 700V 8.6A 35W 850m´Î@10V4.5A 4.5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***ponent Stockers USA: 8.6 A 700 V 0.85 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 700V, 8.6A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V

***icroelectronics: N-channel 800 V, 0.8 Ohm typ., 6 A MDmesh K5 Power MOSFET in TO-220FP package

***ure Electronics: N-Channel 800 V 6 A 0.95 Ohm Zener-protected Mosfet - TO-220FP

***r Electronics: Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N-CH, 800V, 6A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***ical: Trans MOSFET N-CH 650V 9A Automotive 3-Pin(3+Tab) ITO-220AB Tube

***(Formerly Allied Electronics): MOSFET N-channel 650V 9A TO-220F

***or: MOSFET N-CH 650V 9A ITO220AB

Market price

Part #	Mfg.	Description	Stock	Price
STP9NK80Z DISTI # 497-5133-5-ND	STMicroelectronics	MOSFET N-CH 800V 7.5A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	83In Stock	50:$2.3626 10:$2.5040 1:$2.7900
STP9NK80Z DISTI # 511-STP9NK80Z	STMicroelectronics	MOSFET SUPERMESH&#153MOSFET RoHS: Compliant	0

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Availability

Stock:: Available
On Order:: 5500
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Current price of STP9NK80Z is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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STP9NK80Z

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes