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IRFHM830DTR2PBF

IRFHM830DTR2PBF
Mfr. #:
IRFHM830DTR2PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 4.3mOhms 13nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRFHM830DTR2PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PQFN-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
20 A
Rds On - Drain-Source Resistance:
5.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.8 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
13 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.8 W
Configuration:
Single
Packaging:
Reel
Height:
1.05 mm
Length:
3.3 mm
Transistor Type:
1 N-Channel
Width:
3.3 mm
Brand:
Infineon / IR
Forward Transconductance - Min:
69 S
Fall Time:
6.7 ns
Product Type:
MOSFET
Rise Time:
20 ns
Factory Pack Quantity:
400
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
9.1 ns
Typical Turn-On Delay Time:
9.8 ns
Part # Aliases:
SP001551956
Unit Weight:
0.017637 oz
Tags
IRFHM830DT, IRFHM830D, IRFHM830, IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package
***ied Electronics & Automation
MOSFET; 30V; 40A; 4.3 MOHM; 13 NC QG; 1.1 OHM RG; MONOFETKY; PQFN 3.3X3.3
***ical
Trans MOSFET N-CH 30V 20A 8-Pin PQFN EP T/R
***ment14 APAC
MOSFET,N CH,30V,40A,8PQFN; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:21A; Power Dissipation Pd:2.7W; Voltage Vgs Max:20V
Part # Mfg. Description Stock Price
IRFHM830DTR2PBF
DISTI # IRFHM830DTR2PBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 20A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IRFHM830DTR2PBF
    DISTI # IRFHM830DTR2PBFDKR-ND    		Infineon Technologies AGMOSFET N-CH 30V 20A PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IRFHM830DTR2PBF
      DISTI # 70019949      		Infineon Technologies AGMOSFET,30V,40A,4.3 MOHM,13 NC QG,1.1 OHM RG,MONOFETKY,PQFN 3.3X3.3
      RoHS: Compliant      		0
      • 800:$1.2900
      • 1600:$1.2640
      • 4000:$1.2260
      • 8000:$1.1740
      • 20000:$1.0970
      IRFHM830DTR2PBF
      DISTI # 942-IRFHM830DTR2PBF      		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 4.3mOhms 13nC
      RoHS: Compliant      		0
        IRFHM830DTR2PBFInternational Rectifier 
        RoHS: Compliant        		800
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          Availability
          Stock:
          Available
          On Order:
          4500
          Enter Quantity:
          Current price of IRFHM830DTR2PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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