IRFHM8329TRPBF

Mfr. #:: IRFHM8329TRPBF
Manufacturer:: Infineon Technologies
Description:: MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3
Lifecycle:: New from this manufacturer.
Datasheet:: IRFHM8329TRPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IRFHM8329TRPBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PQFN-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 16 A

Rds On - Drain-Source Resistance:: 6.8 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.7 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 26 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 2.6 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 0.9 mm

Length:: 3.3 mm

Transistor Type:: 1 N-Channel

Type:: HEXFET Power MOSFET

Width:: 3.3 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 56 S

Fall Time:: 14 ns

Product Type:: MOSFET

Rise Time:: 74 ns

Factory Pack Quantity:: 4000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 14 ns

Typical Turn-On Delay Time:: 14 ns

Part # Aliases:: SP001566808

Tags: IRFHM83, IRFHM8, IRFHM, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
Packaging Boxes

IRFHM8329TRPBF Description

***ure Electronics: Single N-Channel 30 V 6.1 mOhm 26 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ark: TAPE AND REEL / MOSFET, 30V, 25A, 4.9 mOhm, 13nC Qg, PQFN 3.3x3.3

***nell: MOSFET, N-CH, 30V, 57A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 57A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Pow

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ure Electronics: Single N-Channel 30 V 6 mOhm 20 nC OptiMOS Power Mosfet - TDSON-8

***et: Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R

***nell: MOSFET, N-CH, 30V, 65A, PG-TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 65A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 39W; Transistor Case Style: PG-TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***i-Key Marketplace: POWER FIELD-EFFECT TRANSISTOR, 1

*** Services: CoC and 2-years warranty / RFQ for pricing

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33

***Yang: Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R - Tape and Reel

***ark: Transistor; Continuous Drain Current, Id:16A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); 100% Rg tested; Compatible with Existing Surface Mount Techniques; Very Low Gate Charge; Low Junction to PCB Thermal Resistance; Fully Characterized Avalanche Voltage and Current; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET, 30V, 40A, 4.3 MOHM, 13 NC QG, 1.1 OHM RG, MONOFETKY, PQFN 3.3X3.3

***ment14 APAC: MOSFET,N CH,SCH DIODE,30V,20A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):3400µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.8W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Power Dissipation Pd:2.8W; Voltage Vgs Max:20V

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Schottky intrinsic diode with low forward voltage; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***emi: N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ

***r Electronics: Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

***nell: MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***Yang: Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel

*** Stop Electro: Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

***emi: PowerTrench® MOSFET, N-Channel, 30V, 40A, 15mΩ

***ure Electronics: FDD8878 Series 30 V 11 A 15 mOhm SMT N-Ch PowerTrench® MOSFET - TO-252AA

***r Electronics: Power Field-Effect Transistor, 36A I(D), 30V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

IRFHM8329TRPBF More Information

Dual PQFN HEXFET® Power MOSFETs: Infineon Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), Infineon Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IRFHM8329TRPBF DISTI # V72:2272_13891082	Infineon Technologies AG	Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R	4000	3000:$0.2249 1000:$0.2273 500:$0.2591 250:$0.2761 100:$0.2792 25:$0.3726 10:$0.3935 1:$0.4555
IRFHM8329TRPBF DISTI # IRFHM8329TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 30V 16A PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4474In Stock	1000:$0.3340 500:$0.4094 100:$0.5412 10:$0.6920 1:$0.7800
IRFHM8329TRPBF DISTI # IRFHM8329TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 16A PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4474In Stock	1000:$0.3340 500:$0.4094 100:$0.5412 10:$0.6920 1:$0.7800
IRFHM8329TRPBF DISTI # IRFHM8329TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 30V 16A PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Limited Supply - Call	4000:$0.2969
IRFHM8329TRPBF DISTI # 24327846	Infineon Technologies AG	Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R	8000	4000:$0.1762
IRFHM8329TRPBF DISTI # 30334270	Infineon Technologies AG	Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R	4000	3000:$0.2249 1000:$0.2273 500:$0.2591 250:$0.2761 100:$0.2792 38:$0.3726
IRFHM8329TRPBF DISTI # IRFHM8329TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFHM8329TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.1909 8000:$0.1839 16000:$0.1779 24000:$0.1719 40000:$0.1689
IRFHM8329TRPBF DISTI # SP001566808	Infineon Technologies AG	Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R (Alt: SP001566808) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.1919 8000:€0.1859 16000:€0.1859 24000:€0.1849 40000:€0.1849
IRFHM8329TRPBF DISTI # 91Y4685	Infineon Technologies AG	MOSFET, N-CH, 30V, 57A, PQFN-8,Transistor Polarity:N Channel,Continuous Drain Current Id:57A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0048ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes	3362	1:$0.6300 10:$0.5160 25:$0.4550 50:$0.3940 100:$0.3330 250:$0.3110 500:$0.2890 1000:$0.2670
IRFHM8329TRPBF DISTI # 942-IRFHM8329TRPBF	Infineon Technologies AG	MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3 RoHS: Compliant	4712	1:$0.6300 10:$0.5160 100:$0.3330 1000:$0.2670
IRFHM8329TRPBF DISTI # 9155001P	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 30V 16A PQFN8, RL	2960	200:£0.1330
IRFHM8329TRPBF DISTI # IRFHM8329TRPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,16A,2.6W,PQFN3.3X3.3	2232	3:$0.3500 10:$0.3200 25:$0.2700 100:$0.2500
IRFHM8329TRPBF DISTI # 2580012	Infineon Technologies AG	MOSFET, N-CH, 30V, 57A, PQFN-8 RoHS: Compliant	3362	1:$1.1900 10:$1.0500 100:$0.8050 500:$0.5970 1000:$0.4780
IRFHM8329TRPBF DISTI # C1S322000490886	Infineon Technologies AG	Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R RoHS: Compliant	8000	4000:$0.2910
IRFHM8329TRPBF DISTI # C1S322000490895	Infineon Technologies AG	Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R RoHS: Compliant	4000	250:$0.2854 100:$0.2862 25:$0.3948 10:$0.3968
IRFHM8329TRPBF DISTI # 2580012	Infineon Technologies AG	MOSFET, N-CH, 30V, 57A, PQFN-8 RoHS: Compliant	3422	5:£0.4420 25:£0.1680 100:£0.1650 250:£0.1620 500:£0.1580

Image	Part #	Description
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	Mfr.#: IRFHM830TRPBF OMO.#: OMO-IRFHM830TRPBF	MOSFET 30V 1 N-CH HEXFET PWR MOSFET 3.8mOhms
	Mfr.#: IRFHM8342TRPBF OMO.#: OMO-IRFHM8342TRPBF	MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET
	Mfr.#: IRFHM8337TRPBF OMO.#: OMO-IRFHM8337TRPBF	MOSFET 30V 5nC SGL N-CH HEXFET Pwr MOSFET
	Mfr.#: IRFHM831TRPBF OMO.#: OMO-IRFHM831TRPBF	MOSFET 30V 1 N-CH HEXFET 7.8mOhms 7.3nC
	Mfr.#: IRFHM830DTR2PBF OMO.#: OMO-IRFHM830DTR2PBF	MOSFET 30V 1 N-CH HEXFET 4.3mOhms 13nC
	Mfr.#: IRFHM830DTRPBF. OMO.#: OMO-IRFHM830DTRPBF--1190	New and Original
	Mfr.#: IRFHM8326TRPBF OMO.#: OMO-IRFHM8326TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 25A PQFN
	Mfr.#: IRFHM8329TRPBF OMO.#: OMO-IRFHM8329TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 16A PQFN
	Mfr.#: IRFHM830DTRPBF OMO.#: OMO-IRFHM830DTRPBF-INFINEON-TECHNOLOGIES	Darlington Transistors MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG

IRFHM8329TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes