FDJ1027P

Mfr. #:: FDJ1027P
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 1.8 V P-CH PowerTrench MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: FDJ1027P Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SC-75-6

Number of Channels:: 2 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 2.8 A

Rds On - Drain-Source Resistance:: 160 mOhms

Vgs - Gate-Source Voltage:: 8 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1.5 W

Configuration:: Dual

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 0.8 mm

Length:: 1.6 mm

Product:: MOSFET Small Signal

Series:: FDJ1027P

Transistor Type:: 2 P-Channel

Width:: 1.6 mm

Brand:: ON Semiconductor / Fairchild

Fall Time:: 13 ns

Product Type:: MOSFET

Rise Time:: 13 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 13 ns

Typical Turn-On Delay Time:: 8 ns

Part # Aliases:: FDJ1027P_NL

Unit Weight:: 0.003386 oz

Tags: FDJ1027P, FDJ1027, FDJ102, FDJ10, FDJ1, FDJ

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FDJ1027P Description

***ical: Trans MOSFET P-CH 20V 2.8A 6-Pin SC-75 T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-2.8A; On Resistance, Rds(on):108mohm; Package/Case:FLMP; Power Dissipation, Pd:1.5W; Drain-Source Breakdown Voltage:-20V ;RoHS Compliant: Yes

***rchild Semiconductor: This dual P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

***nell: MOSFET P CH -20V -2.8A FLMP SC-75; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.8A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 1.5W; Transistor Case Style: SC-75; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: -2.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -800mV; Voltage Vgs Rds on Measurement: -4.5V

***inecomponents.com: MLP6 2X1.6,-20V,-2.9A,112m ohm,DUAL, PCH POWER TRENCH MOSFET

***ark: Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):93mohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-700mV; Power Dissipation Pd:1.4W ;RoHS Compliant: Yes

***rchild Semiconductor: This dual P-Channel MOSFET uses Fairchild's advanced low voltage PowerTrench® process. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The SC-75 MicroFET package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

***emi: N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ

***el Electronic: Modular Connectors - Jacks With Magnetics 1 (Unlimited) RJ45 1 Solder 90° Angle (Right) Shielded, EMI Finger Through Hole Down 10/100/1000 Base-T, AutoMDIX CONN MAGJACK 1PORT 1000 BASE-T

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

***ment14 APAC: MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V

***rchild Semiconductor: This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

***ure Electronics: Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23

***ical: Trans MOSFET N-CH 20V 1.2A Automotive 3-Pin SC-59 T/R

***ser: Transistor - FET N-Channel 20V 1.2A

***des Inc SCT: N-Channel Mosfet, 20V VDS, 8±V VGS

***ark: Mosfet Bvdss: 8V~24V Sc59 T&r 3K

***(Formerly Allied Electronics): N-Channel Enhancement Mode FET SC-59

***ment14 APAC: MOSFET, N CH, 20V, 1.2A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-59; No. of Pins:3; Current Id Max:4A; Package / Case:SC-59; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V

***(Formerly Allied Electronics): SI1062X-T1-GE3 N-channel MOSFET Transistor; 0.53 A; 20 V; 3-Pin SC-89

***ment14 APAC: MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Source Voltage Vds:20V; On Resistance

***nell: MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 530mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***et Japan: Transistor MOSFET Array Dual N-CH 20V 0.61A 6-Pin SC-89 T/R

***ure Electronics: Dual N-Channel 20 V 0.22 W 1.2 nC Silicon Surface Mount Mosfet - SC-89-6

***ment14 APAC: MOSFET, DUAL N-CH, 20V, 0.16A, SC-89; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:610mA; Source Voltage Vds:20V; On

***nell: MOSFET, DUAL N-CH, 20V, 0.16A, SC-89; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 610mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

Market price

Part #	Mfg.	Description	Stock	Price
FDJ1027P DISTI # FDJ1027P-ND	ON Semiconductor	MOSFET 2P-CH 20V 2.8A SC-75 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
FDJ1027P DISTI # 512-FDJ1027P	ON Semiconductor	MOSFET 1.8 V P-CH PowerTrench MOSFET RoHS: Compliant	0
FDJ1027P	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 2.8A I(D), 20V, 0.16ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	283275	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3300 1:$0.3600
FDJ1027P	Fairchild Semiconductor Corporation		48000
FDJ1027P	Fairchild Semiconductor Corporation		6000	6:$0.8625 25:$0.5606 91:$0.3234 311:$0.2760 672:$0.2415 1596:$0.2243
FDJ1027P	.		27
FDJ1027P	Fairchild Semiconductor Corporation		38400	4580:$0.2808 2138:$0.3276 1:$0.9360
FDJ1027P	Freescale Semiconductor		4800	2677:$0.2875 581:$0.2990 1:$1.1500
FDJ1027P-G	Fairchild Semiconductor Corporation		3000
FDJ1027P. DISTI # 1350570	ON Semiconductor	RoHS: Compliant	0	1000:$0.4810 500:$0.5120 250:$0.6130 100:$0.7260 25:$1.0100 1:$1.2000

Image	Part #	Description
	Mfr.#: FDJ1032C OMO.#: OMO-FDJ1032C	MOSFET SC75 FLMP COMPLEMENTARY POWER
	Mfr.#: FDJ127P OMO.#: OMO-FDJ127P	MOSFET P-Ch -1.8 Vgs Spec PowerTrench
	Mfr.#: FDJ1027P OMO.#: OMO-FDJ1027P	MOSFET 1.8 V P-CH PowerTrench MOSFET
	Mfr.#: FDJ1027P-G OMO.#: OMO-FDJ1027P-G-1190	New and Original
	Mfr.#: FDJ1029P OMO.#: OMO-FDJ1029P-1190	New and Original
	Mfr.#: FDJ128N-NL OMO.#: OMO-FDJ128N-NL-1190	New and Original
	Mfr.#: FDJ128N/BXX OMO.#: OMO-FDJ128N-BXX-1190	New and Original
	Mfr.#: FDJ128N_F077 OMO.#: OMO-FDJ128N-F077-ON-SEMICONDUCTOR	MOSFET N-CH 20V 5.5A SC75-6
	Mfr.#: FDJ128N_NL , 1N5234BRL OMO.#: OMO-FDJ128N-NL-1N5234BRL-1190	New and Original
	Mfr.#: FDJ129P-NL OMO.#: OMO-FDJ129P-NL-1190	New and Original

FDJ1027P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes