T1G4012036-FS

T1G4012036-FS
Mfr. #:
T1G4012036-FS
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
Lifecycle:
New from this manufacturer.
Datasheet:
T1G4012036-FS Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
T1G4012036-FS more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
pHEMT
Technology:
GaAs
Gain:
10.4 dB
Vds - Drain-Source Breakdown Voltage:
12 V
Vgs - Gate-Source Breakdown Voltage:
- 7 V
Id - Continuous Drain Current:
517 mA
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
5.6 W
Mounting Style:
SMD/SMT
Packaging:
Gel Pack
Configuration:
Dual
Operating Frequency:
20 GHz
Operating Temperature Range:
- 65 C to + 150 C
Product:
RF JFET
Type:
GaAs pHEMT
Brand:
Qorvo
Forward Transconductance - Min:
619 mS
Number of Channels:
2 Channel
P1dB - Compression Point:
32.5 dBm
Product Type:
RF JFET Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Part # Aliases:
1098617
Tags
T1G4012036-F, T1G401, T1G4, T1G
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
T1G4012036-FS
DISTI # 772-T1G4012036-FS
QorvoRF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
RoHS: Compliant
0
  • 25:$316.7800
Image Part # Description
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL-318

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS-318

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS-EVB1

Mfr.#: T1G4012036-FS-EVB1

OMO.#: OMO-T1G4012036-FS-EVB1-1190

New and Original
T1G4012036-XCC-1-FS

Mfr.#: T1G4012036-XCC-1-FS

OMO.#: OMO-T1G4012036-XCC-1-FS-1190

New and Original
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of T1G4012036-FS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
25
$316.78
$7 919.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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