T1G4012036-FL

T1G4012036-FL
Mfr. #:
T1G4012036-FL
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
Lifecycle:
New from this manufacturer.
Datasheet:
T1G4012036-FL Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
T1G4012036-FL more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
17 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Id - Continuous Drain Current:
7.5 A
Output Power:
170 W
Maximum Operating Temperature:
+ 225 C
Mounting Style:
SMD/SMT
Package / Case:
H-37265J-2
Packaging:
Reel
Configuration:
Single
Operating Frequency:
2620 MHz to 2690 MHz
Brand:
Wolfspeed / Cree
Product Type:
RF JFET Transistors
Factory Pack Quantity:
250
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 3.8 V
Tags
T1G4012036-F, T1G401, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
T1G4012036-FL
DISTI # 772-T1G4012036-FL
QorvoRF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
RoHS: Compliant
0
  • 25:$338.4400
Image Part # Description
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FL

Mfr.#: T1G4012036-FL

OMO.#: OMO-T1G4012036-FL-318

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS

Mfr.#: T1G4012036-FS

OMO.#: OMO-T1G4012036-FS-318

RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak
T1G4012036-FS-EVB1

Mfr.#: T1G4012036-FS-EVB1

OMO.#: OMO-T1G4012036-FS-EVB1-1190

New and Original
T1G4012036-XCC-1-FS

Mfr.#: T1G4012036-XCC-1-FS

OMO.#: OMO-T1G4012036-XCC-1-FS-1190

New and Original
Availability
Stock:
Available
On Order:
1500
Enter Quantity:
Current price of T1G4012036-FL is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$375.00
$375.00
25
$338.44
$8 461.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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