PartNumber | T1G4012036-FL | T1G4012036-FS | T1G4012036-FS-EVB1 |
Description | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | |
Manufacturer | Cree, Inc. | Qorvo | - |
Product Category | RF JFET Transistors | RF JFET Transistors | - |
RoHS | Y | Y | - |
Transistor Type | HEMT | pHEMT | - |
Technology | GaN SiC | GaAs | - |
Gain | 17 dB | 10.4 dB | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 150 V | 12 V | - |
Id Continuous Drain Current | 7.5 A | 517 mA | - |
Output Power | 170 W | - | - |
Maximum Operating Temperature | + 225 C | + 150 C | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | H-37265J-2 | - | - |
Packaging | Reel | Gel Pack | - |
Configuration | Single | Dual | - |
Operating Frequency | 2620 MHz to 2690 MHz | 20 GHz | - |
Brand | Wolfspeed / Cree | Qorvo | - |
Product Type | RF JFET Transistors | RF JFET Transistors | - |
Factory Pack Quantity | 250 | 100 | - |
Subcategory | Transistors | Transistors | - |
Vgs th Gate Source Threshold Voltage | - 3.8 V | - | - |
Vgs Gate Source Breakdown Voltage | - | - 7 V | - |
Minimum Operating Temperature | - | - 65 C | - |
Pd Power Dissipation | - | 5.6 W | - |
Operating Temperature Range | - | - 65 C to + 150 C | - |
Product | - | RF JFET | - |
Type | - | GaAs pHEMT | - |
Forward Transconductance Min | - | 619 mS | - |
Number of Channels | - | 2 Channel | - |
P1dB Compression Point | - | 32.5 dBm | - |
Part # Aliases | - | 1098617 | - |