IPB037N06N3 G

Mfr. #:: IPB037N06N3 G
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
Lifecycle:: New from this manufacturer.
Datasheet:: IPB037N06N3 G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPB037N06N3 G more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 90 A

Rds On - Drain-Source Resistance:: 3 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 98 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 188 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: OptiMOS 3

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 61 S

Fall Time:: 5 ns

Product Type:: MOSFET

Rise Time:: 70 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 40 ns

Typical Turn-On Delay Time:: 30 ns

Part # Aliases:: IPB037N06N3GATMA1 IPB37N6N3GXT SP000397986

Unit Weight:: 0.139332 oz

Tags: IPB037N06N3G, IPB037, IPB03, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPB037N06N3 G Ratings and Reviews

J***m

good~!

2019-06-04

E**b

We came straight to the mailbox! I'm happy.

2019-04-20

IPB037N06N3 G More Information

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$0.8174
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$1.0162 100:$1.3065 10:$1.6260 1:$1.8000
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$1.0162 100:$1.3065 10:$1.6260 1:$1.8000
IPB037N06N3G DISTI # IPB037N06N3 G	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: IPB037N06N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0
IPB037N06N3G DISTI # SP000397986	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000397986) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€0.9849 2000:€0.7679 4000:€0.6859 6000:€0.6239 10000:€0.5849
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB037N06N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.7279 2000:$0.7269 4000:$0.7249 6000:$0.7229 10000:$0.7209
IPB037N06N3GATMA1 DISTI # 60R2653	Infineon Technologies AG	MOSFET, N CHANNEL, 60V, 90A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970
IPB037N06N3 G DISTI # 726-IPB037N06N3G	Infineon Technologies AG	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 RoHS: Compliant	20	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970 1000:$0.7440
IPB037N06N3GATMA1 DISTI # 726-IPB037N06N3GATMA	Infineon Technologies AG	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970 1000:$0.7440
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,90A,188W,PG-TO263-3	996	1:$1.2370 3:$1.0655 10:$0.8559 100:$0.7432 1000:$0.6920
IPB037N06N3GATMA1 DISTI # XSFP00000156742	Infineon Technologies AG	RoHS: Compliant	3365	1000:$0.9200 3365:$0.8625
IPB037N06N3GATMA1 DISTI # XSKDRABV0021205	Infineon Technologies AG	RoHS: Compliant	4320	1000:$1.1900 4320:$1.0900
IPB037N06N3GATMA1 DISTI # 1775530	Infineon Technologies AG	MOSFET, N CH, 90A, 30V, PG-TO263-3 RoHS: Compliant	2	1:£1.2900 10:£1.0200 100:£0.7690 250:£0.7190 500:£0.6690
IPB037N06N3GATMA1 DISTI # 1775530	Infineon Technologies AG	MOSFET, N CH, 90A, 30V, PG-TO263-3 RoHS: Compliant	0	1:$2.4000 10:$2.0400 100:$1.6300 500:$1.4200 1000:$1.1800

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Availability

Stock:: Available
On Order:: 5500
Enter Quantity:

Current price of IPB037N06N3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.50~~; ~~$1.50~~

10: ~~$1.28~~; ~~$12.80~~

100: ~~$1.02~~; ~~$102.00~~

500: ~~$0.90~~; ~~$448.50~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

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J***m

E**b

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes