IHW20N135R5XKSA1

Mfr. #:: IHW20N135R5XKSA1
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors IGBT PRODUCTS TrenchStop RC
Lifecycle:: New from this manufacturer.
Datasheet:: IHW20N135R5XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1350 V

Collector-Emitter Saturation Voltage:: 1.65 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 40 A

Pd - Power Dissipation:: 288 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: RC

Packaging:: Tube

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 240

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IHW20N135R5 SP001078568

Unit Weight:: 0.213302 oz

Tags: IHW20N135R5, IHW20N13, IHW20N1, IHW20N, IHW20, IHW2, IHW

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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IHW20N135R5XKSA1 Description

***ineon SCT: 1350 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

***ark: Igbt, Single, 1.35Kv, 40A, To-247; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:288W; Collector Emitter Voltage V(Br)Ceo:1.35Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. | Summary of Features: Switching losses reduced by 30%; Very low conduction losses; Reduced turn-on current spike up to 10%; T j(max) = 175C; Soft current turn-off waveforms for low EMI; Higher blocking voltage V BR(min) = 1350 | Benefits: Increased switching frequency; Lowest power dissipation; Better thermal management for higher reliability; Lower EMI filtering requirements; Reduced system costs; Highest reliability against peak current | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Induction rice cookers; Induction water heaters; Other resonant switching topologies

***ical: Trans IGBT Chip N-CH 1350V 30A 357000mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT 1350V 15A FS2-RC Induction Heating

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 1350V V(BR)CES, N-Channel

***nell: IGBT, 1.35KV, 30A, 175DEG C, 357W;

***i-Key: IGBT TRENCH/FS 1350V 30A TO247

***ark: IGBT, SINGLE, 1.35KV, 30A, TO-247; Continuous Collector Current:30A; Collector Emitter Saturation Voltage:2.15V; Power Dissipation:357W; Collector Emitter Voltage Max:1.35kV; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:- RoHS Compliant: Yes

***omponent: Trans IGBT Chip N-CH 1.2KV 20A 3-Pin TO-247 Tube (Alt: SP001150026)

***nell: IGBT, SINGLE, 1.2KV, 40A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 288W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pi

***ineon SCT: The 5th generation of reverse conducting 1200 V, 20 A TRENCHSTOP™ 5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications, PG-TO247-3, RoHS

***ineon: The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. | Summary of Features: Switching losses reduced by 30%; Very low conduction losses; Reduced turn-on current spike up to 10%; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Increased switching frequency; Lowest power dissipation; Better thermal management for higher reliability; Lower EMI filtering requirements; Reduced system costs; Highest reliability against peak current | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Induction rice cookers; Induction water heaters; Other resonant switching topologies

***ical: Trans IGBT Chip N-CH 1200V 40A 310000mW 3-Pin(3+Tab) TO-247 Tube

***ment14 APAC: IGBT+ DIODE,1200V,20A,TO247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:310W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:310W

***ineon: The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in VCEsat and Vf; Lowest switching losses, highest efficiency; Tj(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents

***ource: 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode43A, 1200V,,NPTN£¨

*** Source Electronics: Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247

***ure Electronics: HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247

***ment14 APAC: IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***rchild Semiconductor: HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***et: Reverse Conducting IGBT With Monolithic Body Diode 1350V 30A 3-Pin TO-247

***nell: IGBT, SINGLE, 1.35KV, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 349W; Collector Emitter Voltage V(br)ceo: 1.35k; Available until stocks are exhausted

***ineon: The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications

***ical: Trans IGBT Chip N-CH 1350V 120A 394000mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT, 1350V 40A FS2-RC Induction Heating

***r Electronics: Insulated Gate Bipolar Transistor, 80A I(C), 1350V V(BR)CES, N-Channel

***i-Key: IGBT TRENCH/FS 1350V 80A TO247

***ment14 APAC: Transistor, IGBT, 2.4V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2.4V; Power Dissipation Pd:394W; Collector Emitter Voltage V(br)ceo:1.35kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C

Market price

Part #	Mfg.	Description	Stock	Price
IHW20N135R5XKSA1 DISTI # V99:2348_06377974	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 40A 3-Pin(3+Tab) TO-247 Tube	223	1200:$1.9980 720:$2.3330 240:$2.7700 10:$3.1940 1:$4.1305
IHW20N135R5XKSA1 DISTI # V36:1790_06377974	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 40A 3-Pin(3+Tab) TO-247 Tube	0	240000:$1.6660 120000:$1.6680 24000:$1.8840 2400:$2.2580 240:$2.3200
IHW20N135R5XKSA1 DISTI # IHW20N135R5XKSA1-ND	Infineon Technologies AG	IGBT 1350V 40A 288W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	515In Stock	2640:$2.0020 720:$2.4925 240:$2.9279 25:$3.3784 10:$3.5740 1:$3.9800
IHW20N135R5XKSA1 DISTI # 31230576	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 40A 3-Pin(3+Tab) TO-247 Tube	223	4:$4.1305
IHW20N135R5XKSA1 DISTI # IHW20N135R5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 40A 3-Pin TO-247 Tube - Bulk (Alt: IHW20N135R5XKSA1) Min Qty: 204 Container: Bulk	Americas - 0	1020:$1.4900 2040:$1.4900 612:$1.5900 204:$1.6900 408:$1.6900
IHW20N135R5XKSA1 DISTI # IHW20N135R5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 40A 3-Pin TO-247 Tube - Rail/Tube (Alt: IHW20N135R5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$1.7900 2400:$1.7900 480:$1.8900 960:$1.8900 240:$1.9900
IHW20N135R5XKSA1 DISTI # SP001078568	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 40A 3-Pin TO-247 Tube (Alt: SP001078568) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.3900 100:€1.5900 500:€1.5900 25:€1.6900 50:€1.6900 10:€1.7900 1:€1.9900
IHW20N135R5XKSA1 DISTI # IHW20N135R5	Infineon Technologies AG	Trans IGBT Chip N-CH 1.35KV 40A 3-Pin TO-247 Tube (Alt: IHW20N135R5) RoHS: Compliant Min Qty: 240 Container: Tube	Asia - 0	12000:$1.8101 6000:$1.8333 2400:$1.8571 1200:$1.8816 720:$1.9324 480:$1.9861 240:$2.0429
IHW20N135R5XKSA1 DISTI # 12AC9667	Infineon Technologies AG	IGBT, SINGLE, 1.35KV, 40A, TO-247,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:288W,Collector Emitter Voltage V(br)ceo:1.35kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes	680	500:$2.3900 250:$2.6700 100:$2.8100 50:$2.9500 25:$3.1000 10:$3.2400 1:$3.8200
IHW20N135R5XKSA1 DISTI # 726-IHW20N135R5XKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS TrenchStop RC RoHS: Compliant	276	1:$3.7800 10:$3.2100 100:$2.7800 250:$2.6400 500:$2.3700
IHW20N135R5 DISTI # 726-IHW20N135R5	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS TrenchStop RC RoHS: Compliant	36	1:$3.7800 10:$3.2100 100:$2.7800 250:$2.6400 500:$2.3700
IHW20N135R5XKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 40A I(C), 1350V V(BR)CES, N-Channel, TO-247 RoHS: Not Compliant	91600	1000:$1.6200 500:$1.7000 100:$1.7700 25:$1.8500 1:$1.9900
IHW20N135R5XKSA1 DISTI # 2709909	Infineon Technologies AG	IGBT, SINGLE, 1.35KV, 40A, TO-247 RoHS: Compliant	678	2640:$3.0200 720:$3.7600 240:$4.4200 25:$5.1000 10:$5.3900 1:$6.0000
IHW20N135R5XKSA1 DISTI # 2709909	Infineon Technologies AG	IGBT, SINGLE, 1.35KV, 40A, TO-247	683	500:£1.8100 250:£2.0200 100:£2.1200 10:£2.4500 1:£3.2300

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IHW20N135R5XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes