IPA60R099P7XKSA1

Mfr. #:: IPA60R099P7XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CHANNEL 600V 31A TO220
Lifecycle:: New from this manufacturer.
Datasheet:: IPA60R099P7XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPA60R099P7XKSA1 more Information

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Tags: IPA60R099P, IPA60R09, IPA60R0, IPA60R, IPA60, IPA6, IPA

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IPA60R099P7XKSA1 Description

***ure Electronics: Single N-Channel 600 V 99 mOhm 45 nC CoolMOS Power Mosfet - TO-220-3FP

***i-Key: MOSFET N-CHANNEL 600V 31A TO220

***ronik: N-CH 600V 31A 99mOhm TO220FP

***ical: P7 Power Transistor

***et Europe: HIGH POWER_NEW

***ark: Mosfet, N-Ch, 600V, 31A, 29W, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.077Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 31A, 29W, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:29W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 600V, 31A, 29W, TO-220FP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.077ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:29W; Modello Case Transistor:TO-220FP; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting

IPA60R099P7XKSA1 More Information

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

Part #	Mfg.	Description	Stock	Price
IPA60R099P7XKSA1 DISTI # 25031550	Infineon Technologies AG	IPA60R099P7XKSA1	450	5:$2.5152
IPA60R099P7XKSA1 DISTI # IPA60R099P7XKSA1-ND	Infineon Technologies AG	MOSFET N-CHANNEL 600V 31A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$2.8621 500:$3.3353 100:$4.0450 10:$4.8640 1:$5.4100
IPA60R099P7XKSA1 DISTI # C1S322000681202	Infineon Technologies AG	MOSFETs RoHS: Compliant	450	100:$3.5400 50:$3.8500 10:$4.6900 1:$7.2300
IPA60R099P7XKSA1 DISTI # SP001658390	Infineon Technologies AG	HIGH POWER_NEW (Alt: SP001658390) RoHS: Compliant Min Qty: 1	Europe - 500	1:€2.8900 10:€2.2900 25:€2.0900 50:€1.9900 100:€1.9900 500:€1.8900 1000:€1.8900
IPA60R099P7XKSA1 DISTI # IPA60R099P7XKSA1	Infineon Technologies AG	HIGH POWER_NEW - Rail/Tube (Alt: IPA60R099P7XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$2.2900 1000:$2.1900 2000:$2.1900 3000:$2.0900 5000:$2.0900
IPA60R099P7XKSA1 DISTI # 726-IPA60R099P7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1:$4.3800 10:$3.7300 100:$3.2300 250:$3.0700 500:$2.7500
IPA60R099P7XKSA1	Infineon Technologies AG	Single N-Channel 600 V 99 mOhm 45 nC CoolMOS Power Mosfet - TO-220-3FP RoHS: Not Compliant	525Tube	500:$2.3600
IPA60R099P7XKSA1 DISTI # XSKDRABV0021201	INF	RoHS: Compliant	500	500:$4.3900

Related products

Image	Part #	Description
	Mfr.#: IPA60R099P6 OMO.#: OMO-IPA60R099P6	MOSFET HIGH POWER PRICE/PERFORM
	Mfr.#: IPA60R099P6XKSA1 OMO.#: OMO-IPA60R099P6XKSA1	MOSFET HIGH POWER PRICE/PERFORM
	Mfr.#: IPA60R099C6XKSA1 OMO.#: OMO-IPA60R099C6XKSA1	MOSFET N-Ch 600V 38A TO220FP-3 CoolMOS C6
	Mfr.#: IPA60R099C7XKSA1 OMO.#: OMO-IPA60R099C7XKSA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPA60R099C7XKSA1 OMO.#: OMO-IPA60R099C7XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V TO220-3
	Mfr.#: IPA60R099C6 OMO.#: OMO-IPA60R099C6-1190	Trans MOSFET N-CH 650V 37.9A 3-Pin TO-220FP Tube (Alt: IPA60R099C6)
	Mfr.#: IPA60R099C6,6R099C6 OMO.#: OMO-IPA60R099C6-6R099C6-1190	New and Original
	Mfr.#: IPA60R099C6XKSA1 OMO.#: OMO-IPA60R099C6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 37.9A TO220-FP
	Mfr.#: IPA60R099P6 OMO.#: OMO-IPA60R099P6-1190	Trans MOSFET N-CH 650V 37.9A 3-Pin TO-220FP Tube (Alt: IPA60R099P6)
	Mfr.#: IPA60R099P6XKSA1 OMO.#: OMO-IPA60R099P6XKSA1-INFINEON-TECHNOLOGIES	MOSFET HIGH POWER PRICE/PERFORM

Availability

Stock:: Available
On Order:: 1500
Enter Quantity:

Current price of IPA60R099P7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.92~~; ~~$2.92~~

10: ~~$2.78~~; ~~$27.79~~

100: ~~$2.63~~; ~~$263.25~~

500: ~~$2.49~~; ~~$1 243.15~~

1000: ~~$2.34~~; ~~$2 340.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPA60R099P7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes