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AOTS40B65H1

AOTS40B65H1
Mfr. #:
AOTS40B65H1
Manufacturer:
Alpha & Omega Semiconductor Inc
Description:
IGBT 650V 40A TO220
Lifecycle:
New from this manufacturer.
Datasheet:
AOTS40B65H1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AOTS40B65H1 DatasheetAOTS40B65H1 Datasheet (P4-P6)AOTS40B65H1 Datasheet (P7)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Alpha & Omega Semiconductor Inc.
Product Category
IGBTs - Single
Series
Alpha IGBT
Packaging
Tube
Package-Case
TO-220-3
Input-Type
Standard
Mounting-Type
Through Hole
Supplier-Device-Package
TO-220
Power-Max
300W
Reverse-Recovery-Time-trr
-
Current-Collector-Ic-Max
80A
Voltage-Collector-Emitter-Breakdown-Max
650V
IGBT-Type
-
Current-Collector-Pulsed-Icm
120A
Vce-on-Max-Vge-Ic
2.4V @ 15V, 40A
Switching-Energy
1.27mJ (on), 460μJ (off)
Gate-Charge
63nC
Td-on-off-25°C
41ns/130ns
Test-Condition
400V, 40A, 7.5 Ohm, 15V
Tags
AOTS, AOT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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IGBT, SINGLE, 600V, 80A, TO-220AB; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:283W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
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650 V, 8 A IGBT with anti-parallel diode in TO-220 package, PG-TO220-3, RoHS
***nell
IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor ; Available until stocks are exhausted
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ical
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
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Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3 Rohs Compliant: Yes
***ineon SCT
High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
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IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
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Part # Mfg. Description Stock Price
AOTS40B65H1
DISTI # 785-1774-ND		Alpha & Omega SemiconductorIGBT 650V 40A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		532In Stock
  • 5000:$1.0850
  • 3000:$1.0986
  • 1000:$1.1799
  • 500:$1.4241
  • 250:$1.6275
  • 100:$1.8309
  • 25:$2.0344
  • 10:$2.2790
  • 1:$2.5200
Image Part # Description
AOTS40B65H1

Mfr.#: AOTS40B65H1

OMO.#: OMO-AOTS40B65H1-ALPHA-AND-OMEGA-SEMICONDUCTOR

 IGBT 650V 40A TO220
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of AOTS40B65H1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.63
$1.63
10
$1.55
$15.46
100
$1.46
$146.48
500
$1.38
$691.70
1000
$1.30
$1 302.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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