AOTS40B65H1 Datasheet AOTS40B65H1 | P1-P3

AOKS40B65H1/AOTS40B65H1

650V, 40A Alpha IGBT

TM

General Description Product Summary

V

CE

I

C

(T

C

=100°C) 40A

V

CE(sat)

(T

J

=25°C) 1.9V

Applications

• Power factor correction

• UPS & Solar Inverters

• Very High Switching Frequency Applications

• Welding Machines

• Latest AlphaIGBT (α IGBT) technology

• 650V breakdown voltage

• High efficient turn-on di/dt controllability

• Very high switching speed

• Low turn-off switching loss and softness

• Very good EMI behavior

• Short-circuit ruggedness

650V

G

C

TO-247

C

E

TO-220

Symbol

V

CE

V

GE

I

CM

I

LM

t

SC

T

J

, T

STG

T

L

Symbol

R

θ

JA

R

θ

JC

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Minimum Order QuantityPackage Type Form

Continuous Collector

Current

T

C

=25°C

80

40

±30

I

C

TO247 Tube 240

AOTS40B65H1 TO220 Tube

Turn off SOA, V

CE

≤ 650V, Limited by T

Jmax

Pulsed Collector Current, Limited by T

Jmax

Gate-Emitter Voltage

T

C

=100°C

Maximum Junction-to-Ambient

Thermal Characteristics

°C/W40

AOKS40B65H1/AOTS40B65H1 Units

Short circuit withstanding time

1)

V

GE

= 15V, V

CC

≤ 300V, T

J

≤ 175°C

Junction and Storage Temperature Range

T

C

=25°C

150

°C

W

T

C

=100°C

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

°C

Power Dissipation

P

D

Maximum IGBT Junction-to-Case

V

UnitsParameter

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

AOKS40B65H1/AOTS40B65H1

Collector-Emitter Voltage 650

Orderable Part Number

AOKS40B65H1

Parameter

5

µs

120

V

A

°C/W0.5

300

-55 to 175

300

120 A

1000

G

E

G

C

E

AOKS40B65H1

G

C

AOTS40B65H1

Rev.1.0: April 2015 www.aosmd.com Page 1 of 7

Symbol Min Typ Max Units

BV

CES

Collector-Emitter Breakdown Voltage

650 - - V

T

J

=25°C - 1.9 2.4

T

J

=125°C - 2.36 -

T

J

=175°C - 2.63 -

V

GE(th)

Gate-Emitter Threshold Voltage

- 4.9 - V

T

J

=25°C - - 10

T

J

=125°C - - 500

T

J

=175°C - - 10000

I

GES

Gate-Emitter leakage current

- - ±100

nA

g

FS

- 30 - S

C

ies

- 1789 - pF

C

oes

- 129 - pF

C

res

- 64 - pF

Q

g

- 63 - nC

Q

ge

- 18 - nC

Q

gc

- 25 - nC

I

C(SC)

- 256 - A

R

g

- 14 - Ω

t

D(on)

- 41 - ns

t

r

- 36 - ns

t

D(off)

- 130 - ns

t

f

- 14 - ns

E

on

- 1.27 - mJ

E

off

- 0.46 - mJ

E

total

- 1.73 - mJ

t

D(on)

- 38 - ns

t

r

- 44 - ns

t

D(off)

- 155 - ns

t

f

- 18 - ns

E

on

- 1.35 - mJ

E

off

- 0.8 - mJ

E

total

- 2.15 - mJ

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On DelayTime

T

J

=175°C

V

GE

=15V, V

CC

=400V, I

C

=40A,

R

G

=7.5Ω

Eon and Etotal include diode

(AOK40B65H1) reverse recovery

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Turn-On Energy

Turn-Off Energy

Total Switching Energy

Turn-Off Energy

Turn-On Rise Time

Turn-On DelayTime

SWITCHING PARAMETERS, (Load Inductive, T

J

=175°C)

Turn-Off Delay Time

T

J

=25°C

V

GE

=15V, V

CC

=400V, I

C

=40A,

R

G

=7.5Ω

Eon and Etotal include diode

(AOK40B65H1) reverse recovery

Total Switching Energy

Turn-Off Fall Time

Turn-On Energy

Gate to Collector Charge

Gate to Emitter Charge

V

GE

=15V, V

CC

=520V, I

C

=40A

SWITCHING PARAMETERS, (Load Inductive, T

J

=25°C)

Short circuit collector current

V

GE

=15V, V

CC

=300V,

t

sc

≤5us, T

J

≤175°C

Total Gate Charge

Gate resistance

V

GE

=0V, V

CC

=0V, f=1MHz

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

Reverse Transfer Capacitance

V

GE

=0V, V

CC

=25V, f=1MHz

V

CE

=20V, I

C

=40A

V

CE

=0V, V

GE

=±30V

Forward Transconductance

V

CE(sat)

I

C

=1mA, V

GE

=0V, T

J

=25°C

V

GE

=15V, I

C

=40A

V

CE

=650V, V

GE

=0V

Collector-Emitter Saturation Voltage

Output Capacitance

Input Capacitance

I

CES

Zero Gate Voltage Collector Current

DYNAMIC PARAMETERS

µA

V

CE

=5V, I

C

=1mA

Rev.1.0: April 2015 www.aosmd.com Page 2 of 7

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

30

60

90

120

150

0 1 2 3 4 5 6 7

I

C

(A)

V

CE

(V)

Figure 1: Output Characteristic

(T

j

=25°C )

9

V

20V

17V

15V

11V

V

GE

= 7V

13V

0

20

40

60

80

100

3

6

9

12

15

I

C

(A)

175°C

25°C

-40°C

0

1.5

3

4.5

6

7.5

0 25 50 75 100 125 150 175

V

CE(sat)

(V)

I

C

=80A

I

C

=20A

I

C

=40A

V

CE

=20V

0

30

60

90

120

150

0 1 2 3 4 5 6 7

I

C

(A)

V

CE

(V)

Figure 2: Output Characteristic

(T

j

=175°C )

V

GE

=7V

9

V

20V

17V

15V

11V

13V

3

6

9

12

15

V

GE

(V)

Figure 3: Transfer Characteristic

Temperature (°C)

Figure 4: Collector-Emitter Saturation Voltage vs.

Junction Temperature

1

2

3

4

5

6

7

0 25 50 75 100 125 150 175

V

GE(TH)

(V)

T

J

(°C)

Figure 5: V

GE(TH)

vs. T

j

Rev.1.0: April 2015 www.aosmd.com Page 3 of 7

AOTS40B65H1

AOTS40B65H1

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