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AOTS40B65H1

P1-P3P4-P6P7-P7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
50
100
150
200
250
300
350
25 50 75 100 125 150 175
Power Disspation
(W)
T
CASE
(°C)
Figure 9: Power Disspation as a Function of Case
1
10
100
1000
10000
0 8 16 24 32 40
Capacitance (pF)
V
CE
(V)
Figure 7: Capacitance Characteristic
C
ies
C
res
C
oes
0
3
6
9
12
15
0 15 30 45 60 75
V
GE
(V)
Q
g
(nC)
Figure 6: Gate-Charge Characteristics
V
CE
=520V
I
C
=40A
0
20
40
60
80
100
25 50 75 100 125 150 175
Current rating I
C
(A)
T
CASE
(°C)
Figure 10: Current De-rating
1
10
100
1000
10000
25 50 75 100 125 150 175
Switching Time (nS)
T
J
(°C)
Figure 11: Switching Time vs.T
j
(V
GE
=15V,V
CE
=400V,I
C
=40A,R
g
=7.5
Ω
)
Td(off)
Tf
Td(on)
Tr
Rev.1.0: April 2015 www.aosmd.com Page 4 of 7
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
10
100
1000
10000
20 30 40 50 60 70 80
Switching Time (nS)
I
C
(A)
Figure 12: Switching Time vs. I
C
(T
j
=175°C,V
GE
=15V,V
CE
=400V,R
g
=7.5
Ω
)
Td(off)
Tf
Td(on)
Tr
1
10
100
1000
10000
0 20 40 60 80
Switching Time (nS)
R
g
(
Ω
)
Figure 13: Switching Time vs. R
g
(T
j
=175°C,V
GE
=15V,V
CE
=400V,I
C
=40A)
Td(off)
Tf
Td(on)
Tr
0
2
4
6
8
10
20 30 40 50 60 70 80
SwitchIng Energy (mJ)
I
C
(A)
Figure 14: Switching Loss vs. I
C
(T
j
=175°C,V
GE
=15V,V
CE
=400V,R
g
=7.5
Ω
)
Eoff
Eon
Etotal
0
1
2
3
4
5
0 20 40 60 80
Switching Energy (mJ)
R
g
(
Ω
)
Figure 15: Switching Loss vs. R
g
(T
j
=175°C,V
GE
=15V,V
CE
=400V,I
C
=40A)
Eoff
Eon
Etotal
0
0.5
1
1.5
2
2.5
3
25 50 75 100 125 150 175
Switching Energy (mJ)
T
J
(°C)
Figure 16: Switching Loss vs. T
j
(V
GE
=15V,V
CE
=400V,I
C
=40A,R
g
=7.5
Ω
)
Eoff
Eon
Etotal
0
0.5
1
1.5
2
2.5
3
200 250 300 350 400 450 500
Switching Energ y (mJ)
V
CE
(V)
Figure 17: Switching Loss vs. V
CE
(T
j
=175°C,V
GE
=15V,I
C
=40A,R
g
=7.5
Ω
)
Eoff
Eon
Etotal
Rev.1.0: April 2015 www.aosmd.com Page 5 of 7
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0.001
0.01
0.1
1
10
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10
Z
θ
JC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for IGBT
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
DM
Rev.1.0: April 2015 www.aosmd.com Page 6 of 7
P1-P3P4-P6P7-P7

AOTS40B65H1

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IGBT 650V 40A TO220
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