IXFN82N60P

IXFN82N60P
Mfr. #:
IXFN82N60P
Manufacturer:
Littelfuse
Description:
IGBT Transistors MOSFET DIODE Id82 BVdass600
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN82N60P Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IXFN82N60P more Information
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
Module
Series
PolarHV
Packaging
Tube
Unit-Weight
1.340411 oz
Mounting-Style
SMD/SMT
Tradename
Polar HiPerFET
Package-Case
SOT-227-4, miniBLOC
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Chassis Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
SOT-227B
Configuration
Single Dual Source
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
1040W
Transistor-Type
1 N-Channel
Drain-to-Source-Voltage-Vdss
600V
Input-Capacitance-Ciss-Vds
23000pF @ 25V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
72A
Rds-On-Max-Id-Vgs
75 mOhm @ 41A, 10V
Vgs-th-Max-Id
5V @ 8mA
Gate-Charge-Qg-Vgs
240nC @ 10V
Pd-Power-Dissipation
1.04 kW
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
24 ns
Rise-Time
23 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuous-Drain-Current
72 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
5 V
Rds-On-Drain-Source-Resistance
75 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
79 ns
Typical-Turn-On-Delay-Time
28 ns
Qg-Gate-Charge
240 nC
Forward-Transconductance-Min
50 S
Channel-Mode
Enhancement
Tags
IXFN8, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Part # Mfg. Description Stock Price
IXFN82N60P
DISTI # IXFN82N60P-ND
IXYS CorporationMOSFET N-CH 600V 72A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube
236In Stock
  • 250:$21.0540
  • 100:$22.9416
  • 30:$24.6840
  • 10:$26.8620
  • 1:$29.0400
IXFN82N60P
DISTI # 747-IXFN82N60P
IXYS CorporationMOSFET DIODE Id82 BVdass600
RoHS: Compliant
138
  • 1:$29.0400
  • 5:$27.5900
  • 10:$26.8700
  • 25:$24.6900
  • 50:$23.6300
  • 100:$22.9400
  • 200:$21.0500
IXFN82N60P
DISTI # 194130
IXYS CorporationMOSFET N-CHANNEL 600V 72A SOT227B, EA167
  • 20:£19.8800
  • 10:£20.8100
  • 1:£23.1200
IXFN82N60PIXYS Corporation82 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET69
  • 55:$17.8200
  • 27:$18.5625
  • 1:$19.3050
IXFN82N60PIXYS Corporation82 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET29
  • 28:$34.6163
  • 14:$36.6525
  • 1:$40.7250
IXFN82N60P
DISTI # IXFN82N60P
IXYS CorporationN-Ch 600V 72A 1040W 0,075R SOT227B
RoHS: Compliant
2
  • 1:€23.4000
  • 5:€20.4000
  • 10:€19.4000
  • 25:€18.7000
IXFN82N60P
DISTI # XSFP00000159107
IXYS Corporation 
RoHS: Compliant
30 in Stock0 on Order
  • 30:$27.7800
  • 10:$34.1800
Image Part # Description
IXFN82N60P

Mfr.#: IXFN82N60P

OMO.#: OMO-IXFN82N60P

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MOSFET N-CH 600V 66A SOT-227
IXFN82N60P

Mfr.#: IXFN82N60P

OMO.#: OMO-IXFN82N60P-IXYS-CORPORATION

IGBT Transistors MOSFET DIODE Id82 BVdass600
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of IXFN82N60P is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$26.73
$26.73
10
$25.39
$253.94
100
$24.06
$2 405.70
500
$22.72
$11 360.25
1000
$21.38
$21 384.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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