SIA110DJ-T1-GE3

SIA110DJ-T1-GE3
Mfr. #:
SIA110DJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V Vds 20V Vgs PowerPAK SC-70
Lifecycle:
New from this manufacturer.
Datasheet:
SIA110DJ-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA110DJ-T1-GE3 DatasheetSIA110DJ-T1-GE3 Datasheet (P4-P6)SIA110DJ-T1-GE3 Datasheet (P7)
ECAD Model:
More Information:
SIA110DJ-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SC-70-6
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
12 A
Rds On - Drain-Source Resistance:
55 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
13 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
19 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET, PowerPAK
Packaging:
Reel
Series:
SIA
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
25 S
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
5 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
14 ns
Typical Turn-On Delay Time:
10 ns
Tags
SIA1, SIA
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Part # Mfg. Description Stock Price
SIA110DJ-T1-GE3
DISTI # SIA110DJ-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHAN 100V POWERPAK SC-7
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$0.3686
  • 3000:$0.3871
SIA110DJ-T1-GE3
DISTI # SIA110DJ-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHAN 100V POWERPAK SC-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.4271
  • 500:$0.5410
  • 100:$0.6549
  • 10:$0.8400
  • 1:$0.9400
SIA110DJ-T1-GE3
DISTI # SIA110DJ-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHAN 100V POWERPAK SC-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.4271
  • 500:$0.5410
  • 100:$0.6549
  • 10:$0.8400
  • 1:$0.9400
SIA110DJ-T1-GE3
DISTI # SIA110DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 100V 12A 6-Pin SC-70 - Tape and Reel (Alt: SIA110DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.3369
  • 18000:$0.3459
  • 12000:$0.3559
  • 6000:$0.3709
  • 3000:$0.3829
SIA110DJ-T1-GE3
DISTI # 59AC7303
Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
  • 10000:$0.3350
  • 6000:$0.3430
  • 4000:$0.3560
  • 2000:$0.3950
  • 1000:$0.4350
  • 1:$0.4530
SIA110DJ-T1-GE3
DISTI # 78AC6485
Vishay IntertechnologiesMOSFET, N-CH, 100V, 12A, 150DEG C, 19W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes6000
  • 500:$0.5060
  • 250:$0.5470
  • 100:$0.5880
  • 50:$0.6470
  • 25:$0.7070
  • 10:$0.7670
  • 1:$0.9290
SIA110DJ-T1-GE3
DISTI # 78-SIA110DJ-T1-GE3
Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SC-70
RoHS: Compliant
5740
  • 1:$0.9200
  • 10:$0.7590
  • 100:$0.5820
  • 500:$0.5010
  • 1000:$0.3950
  • 3000:$0.3690
SIA110DJ-T1-GE3
DISTI # 1783668
Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET POWERPAK SC, RL6000
  • 3000:£0.2800
SIA110DJ-T1-GE3
DISTI # 2932892
Vishay IntertechnologiesMOSFET, N-CH, 100V, 12A, 150DEG C, 19W6000
  • 500:£0.3670
  • 250:£0.3970
  • 100:£0.4260
  • 25:£0.5590
  • 5:£0.6230
SIA110DJ-T1-GE3
DISTI # 2932892
Vishay IntertechnologiesMOSFET, N-CH, 100V, 12A, 150DEG C, 19W
RoHS: Compliant
6000
  • 1000:$0.6130
  • 500:$0.6480
  • 250:$0.7630
  • 100:$0.9270
  • 10:$1.1800
  • 1:$1.4400
Image Part # Description
SIA106DJ-T1-GE3

Mfr.#: SIA106DJ-T1-GE3

OMO.#: OMO-SIA106DJ-T1-GE3

MOSFET 60V Vds 20V Vgs PowerPAK SC-70
SI8806DB-T2-E1

Mfr.#: SI8806DB-T2-E1

OMO.#: OMO-SI8806DB-T2-E1

MOSFET 12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
SI8806DB-T2-E1

Mfr.#: SI8806DB-T2-E1

OMO.#: OMO-SI8806DB-T2-E1-VISHAY

MOSFET N-CH 12V MICROFOOT
SIA106DJ-T1-GE3

Mfr.#: SIA106DJ-T1-GE3

OMO.#: OMO-SIA106DJ-T1-GE3-VISHAY

MOSFET N-CHAN 60V POWERPAK SC-70
Availability
Stock:
Available
On Order:
1988
Enter Quantity:
Current price of SIA110DJ-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.92
$0.92
10
$0.76
$7.59
100
$0.58
$58.20
500
$0.50
$250.50
1000
$0.40
$395.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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