SPD02N80C3ATMA1

SPD02N80C3ATMA1
Mfr. #:
SPD02N80C3ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LOW POWER_LEGACY
Lifecycle:
New from this manufacturer.
Datasheet:
SPD02N80C3ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SPD02N80C3ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
2 A
Rds On - Drain-Source Resistance:
2.7 Ohms
Vgs th - Gate-Source Threshold Voltage:
2.1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
12 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
42 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS C3
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
15 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
72 ns
Typical Turn-On Delay Time:
25 ns
Part # Aliases:
SP001117754 SPD02N80C3
Unit Weight:
0.139332 oz
Tags
SPD02N80C, SPD02N8, SPD02N, SPD02, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 2.7 mOhm 16 nC CoolMOS™ Power Mosfet - PG-TO252-3
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:2A; Package / Case:TO-252; Power Dissipation Pd:42W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
SPD02N80C3ATMA1
DISTI # V72:2272_06384511
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
200
  • 100:$0.7028
  • 25:$0.8210
  • 10:$1.0034
  • 1:$1.1660
SPD02N80C3ATMA1
DISTI # V36:1790_06384511
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 2500000:$0.3821
  • 1250000:$0.3824
  • 250000:$0.4111
  • 25000:$0.4631
  • 2500:$0.4719
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2336In Stock
  • 1000:$0.5321
  • 500:$0.6740
  • 100:$0.8159
  • 10:$1.0460
  • 1:$1.1700
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2336In Stock
  • 1000:$0.5321
  • 500:$0.6740
  • 100:$0.8159
  • 10:$1.0460
  • 1:$1.1700
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 800V 2A 3TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
On Order
  • 12500:$0.4408
  • 5000:$0.4581
  • 2500:$0.4822
SPD02N80C3ATMA1
DISTI # 33925009
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 25000:$0.4171
  • 15000:$0.4197
  • 10000:$0.4345
  • 5000:$0.4504
  • 2500:$0.4672
SPD02N80C3ATMA1
DISTI # 32336490
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
200
  • 100:$0.7028
  • 25:$0.8210
  • 14:$1.0034
SPD02N80C3ATMA1
DISTI # SPD02N80C3ATMA1
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD02N80C3ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$0.4168
  • 15000:$0.4243
  • 10000:$0.4391
  • 5000:$0.4556
  • 2500:$0.4726
SPD02N80C3ATMA1
DISTI # SP001117754
Infineon Technologies AGTrans MOSFET N-CH 800V 2A 3-Pin TO-252 T/R (Alt: SP001117754)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 25000:€0.4149
  • 15000:€0.4469
  • 10000:€0.4839
  • 5000:€0.5279
  • 2500:€0.6459
SPD02N80C3ATMA1
DISTI # 33P8203
Infineon Technologies AGMOSFET, N CHANNEL, 800V, 2A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1000:$0.4970
  • 500:$0.6300
  • 250:$0.6720
  • 100:$0.7130
  • 50:$0.7850
  • 25:$0.8560
  • 10:$0.9280
  • 1:$1.0800
SPD02N80C3ATMA1.
DISTI # 15AC0583
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:800V,On Resistance Rds(on):2.4ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:42W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 25000:$0.4170
  • 15000:$0.4250
  • 10000:$0.4390
  • 5000:$0.4560
  • 1:$0.4730
SPD02N80C3ATMA1
DISTI # 726-SPD02N80C3ATMA1
Infineon Technologies AGMOSFET LOW POWER_LEGACY
RoHS: Compliant
45955
  • 1:$1.0700
  • 10:$0.9190
  • 100:$0.7060
  • 500:$0.6240
  • 1000:$0.4920
SPD02N80C3ATMA1Infineon Technologies AGSingle N-Channel 800 V 2.7 mOhm 16 nC CoolMOS Power Mosfet - PG-TO252-3
RoHS: Not Compliant
100Cut Tape/Mini-Reel
  • 1:$0.6150
  • 50:$0.5300
  • 100:$0.5200
  • 250:$0.5000
  • 500:$0.4900
SPD02N80C3ATMA1
DISTI # 1664105
Infineon Technologies AGMOSFET, N, TO-252229
  • 500:£0.4810
  • 250:£0.5130
  • 100:£0.5440
  • 10:£0.7660
  • 1:£0.9410
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Availability
Stock:
34
On Order:
2017
Enter Quantity:
Current price of SPD02N80C3ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.07
$1.07
10
$0.92
$9.19
100
$0.71
$70.60
500
$0.62
$312.00
1000
$0.49
$492.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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